Plasma Oxidation of SiC at Low Temperatures (below 300°C)
p.1105
p.1105
Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC
p.1109
p.1109
Oxidation of Porous 4H-SiC Substrates
p.1113
p.1113
Advances in SiC Materials and Technology for Schottky Diode Applications
p.1119
p.1119
Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range
p.1125
p.1125
A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability
p.1129
p.1129
Impact of Material Defects on SiC Schottky Barrier Diodes
p.1133
p.1133
A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
p.1137
p.1137
Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
p.1141
p.1141
Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
1125-1128
Citation:
Online since:
April 2002
Keywords:
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