Characterization of SiC using Synchrotron White Beam X-ray Topography
p.431
p.431
Growth of Low Micropipe Density SiC Wafers
p.437
p.437
Investigation of the Origin of Micropipe Defect
p.441
p.441
Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
p.445
p.445
Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
p.449
p.449
Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
p.453
p.453
In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
p.457
p.457
X-ray Topographic Study of SiC Crystal at High Temperature
p.461
p.461
Synchrotron White Beam Topography Studies of 2H SiC Crystals
p.465
p.465
Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
449-452
Citation:
Online since:
May 2000
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