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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Gunn Effect and THz Frequency Power Generation in...

Gunn Effect and THz Frequency Power Generation in n⁺- n - n⁺ GaN Structures

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Ultrafast Phenomena in Semiconductors

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

341-344

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.341

Citation:

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Online since:

December 1998

Authors:

Viktor Gružinskis, Jian Hui Zhao, P. Shiktorov, E. Starikov

Keywords:

Electron Transport, Gallium Nitride (GaN), Microwave Generation, Modeling, Monte Carlo Particle, n⁺- n - n⁺ Diodes, Terahertz Frequency

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