Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
p.5
p.5
Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method
p.14
p.14
Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method
p.20
p.20
Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process
p.26
p.26
Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer
p.32
p.32
Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production
p.37
p.37
Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals
p.44
p.44
Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC
p.51
p.51
An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis
p.57
p.57
Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer
Abstract:
The modified hot-zone design, consisting of a new design and new materials for the backside of SiC seed holder was adopted for reducing stress in grown SiC crystal ingot and for reducing the warpage of 6-inch SiC wafer. Crucible lid on the backside of SiC seed holder was designed to be movable during the growth process. Based on the warp value and mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals grown with new hot-zone design was observed to be better than conventional design.
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Info:
Periodical:
Materials Science Forum (Volume 1004)
Pages:
32-36
Citation:
Online since:
July 2020
Keywords:
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