Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma

Yasuhisa Sano; Kohei Aida; Hiroaki Nishikawa; Kazuya Yamamura; Satoshi Matsuyama; Kazuto Yamauchi

doi:10.4028/www.scientific.net/KEM.516.108

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 516Back-Side Thinning of Silicon Carbide Wafer by...

Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma

Abstract:

Silicon carbide (SiC) power devices have received much attention in recent years because they enable the fabrication of devices with low power consumption. To reduce the on-resistance in vertical power transistors, back-side thinning is required after device processing. However, it is difficult to thin a SiC wafer with a high removal rate by conventional mechanical machining because its high hardness and brittleness cause cracking and chipping during thinning. In this study, we attempted to thin a SiC wafer by plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. The wafer level thinning of a 2-inch 4H-SiC wafer has been possible without a removal thickness distribution caused by the circular shape of the wafer using the newly developed PCVM apparatus for back-side thinning with a spatial wafer stage.

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Periodical:

Key Engineering Materials (Volume 516)

Pages:

108-112

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.516.108

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Online since:

June 2012

Authors:

Yasuhisa Sano, Kohei Aida, Hiroaki Nishikawa, Kazuya Yamamura, Satoshi Matsuyama, Kazuto Yamauchi

Keywords:

Atmospheric-Pressure Plasma, Plasma Chemical Vaporization Machining (PCVM), Plasma Etching, Silicon Carbide (SiC), Thinning

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References

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