Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

Ryoichi Saotome; Naoki Wakiya; Takanori Kiguchi; Jeffrey S. Cross; Osamu Sakurai; Kazuo Shinozaki

doi:10.4028/www.scientific.net/KEM.485.133

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Synthesis and Electrochemical Properties of Hollandite-Type K_XTiO₂
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Microwave Synthesis of Nano-Sized SnO₂ for Lithium-Ion Batteries
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Characterization of Low Temperature Chemical Vapor Deposited Gd₂O₃ Doped CeO₂ Films
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Characterization of Low Temperature Chemical Vapor Deposited Gd₂O₃ Doped CeO₂ Films

Abstract:

Highly oriented and polycrystalline Gd₂O₃ doped CeO₂ thin films were prepared on α-Al₂O₃(0001) substrates by chemical vapor deposition, using Ce(C₅H₄C₂H₅)₃ and Gd(C₅H₄C₂H₅)₃ as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.