Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

Qian Wang; Sung Hoon Choa; Woon Bae Kim; Jun Sik Hwang; Suk Jin Ham; Chang Youl Moon

doi:10.4028/www.scientific.net/KEM.326-328.609

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 326-328Reliability of Hermetic RF MEMS Wafer Level...

Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

Abstract:

In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

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Periodical:

Key Engineering Materials (Volumes 326-328)

Pages:

609-612

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.326-328.609

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Cite this paper

Online since:

December 2006

Authors:

Qian Wang, Sung Hoon Choa, Woon Bae Kim, Jun Sik Hwang, Suk Jin Ham, Chang Youl Moon

Keywords:

Au-Sn Bonding, Hermeticity, Rf MEMS Switch, Wafer Level Packaging

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