Paper Titles

Perturbed Angular Correlation Spectroscopy – A Tool for the Study of Defects and Diffusion at the Atomic Scale
p.3

Impurities in Magnetic Materials Studied by PAC Spectroscopy
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Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and Ab Initio Calculations
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Can PAC Measurements be Used to Investigate Defects in Nano-Structures?
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TiO₂ Nanomaterials Studied by ⁴⁴Ti(EC)⁴⁴Sc Time Differential Perturbed Angular Correlations: Volume and Surface Properties
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Comparison of Jump Frequencies of ¹¹¹In/Cd Tracer Atoms in Sn₃R and In₃R Phases Having the L1₂ Structure (R = Rare-Earth)
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Implanted Impurities in Wide Band Gap Semiconductors
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 311Impurity Centers in Oxides Investigated by γ-γ...

Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and Ab Initio Calculations

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Abstract:

In this chapter Perturbed Angular Correlation (PAC) experiments on binary oxides are described. These experiments provide local-scale fingerprints about the formation, identification, and lattice environment of defect complexes at the PAC probe site. The potential of the PAC observations in conjunction with ab initio calculations is shown. Measurements of the electric-field gradient at impurity sites using ¹¹¹Cd and ¹⁸¹Ta probes are reviewed. Special attention is paid to oxides with the bixbyite structure. The case of In₂O₃ is particularly analyzed. Results obtained with HfO₂, in form of coarse grain or nano particles, are described. The potential results that can be obtained from Density Functional Theory ab initio calculations in doped systems are shown describing the main results observed in many impurity-host systems.

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Defects and Diffusion Studied Using PAC Spectroscopy

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Defect and Diffusion Forum (Volume 311)

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62-104

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https://doi.org/10.4028/www.scientific.net/DDF.311.62

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March 2011

Authors:

Alberto F. Pasquevich, Mario Rentería

Keywords:

Binary Oxide, Defect, Diluted Magnetic Oxides, Hafnium Oxide, Indium Oxide, Semiconductor, Titanium Oxide, Trapped Holes

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