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Abrasive-Free Polishing of Hard Disk Substrate with H2O2-K2S2O8-NaHSO3 Slurry

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Abstract:

The effect of potassium peroxydisulfate-sodium hydrogensulfite (K2S2O8- NaHSO3) as an initiator system in H2O2 –based slurry for the abrasive-free polishing (AFP) of hard disk substrate was investigated. The polishing experimental results showed that the H2O2-K2S2O8-NaHSO3 slurry had ten times higher material removal rate (MRR) than the H2O2 slurry in AFP of the hard disk. Further, the polishing mechanism of H2O2-K2S2O8-NaHSO3 slurry was investigated. Compared with the H2O2 slurry, electron spin-resonance spectroscopy (EPR) analysis showed that the H2O2-K2S2O8-NaHSO3 slurry provides twenty times higher concentration of hydroxyl free radical. Potentiodynamic polarization measurement showed that the corrosion current of disk substrate in the H2O2-K2S2O8-NaHSO3 slurry is larger than that in the H2O2 slurry. The results imply that K2S2O8-NaHSO3 as an initiator system for H2O2–based slurry has application prospects in abrasive-free polishing.

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Info:

Periodical:

Advanced Materials Research (Volumes 690-693)

Pages:

3209-3212

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.690-693.3209

Citation:

Cite this paper

Online since:

May 2013

Authors:

Wei Tao Zhang, Hong Lei

Keywords:

Abrasive-Free Polishing (AFP), Hard Disk Substrate, Initiator, Material Removal Rate (MRR)

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