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Optimizing the Carrier Density and Thermoelectric Properties of Sb2Te3 Films by Using the Growth Temperature

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Abstract

In this work, we report on the structural and thermoelectric properties of Sb2Te3 films deposited on GaSb(111) substrates by using molecular beam epitaxy. The effects of the growth temperature on the microstructure and thermoelectric properties of the films were investigated. The results show that Sb2Te3 films grow on GaSb(111) along (00l) axis normal to the substrate and have a hexagonal structure with a layer-by-layer growth mode in growth temperature range from 200 to 250 °C while at 175 and 300 °C, the films show an island growth mode. Te and Sb2Te3 phases coexist at a growth temperature of 175 °C. The films exhibit a metallic behavior for growth temperatures below 250 °C and a semiconductor behavior at 300 °C. By changing growth temperature, we were able to vary the carrier density from 9.96×1018 to 4.55×1019 cm −3. At room temperature, the Seebeck coefficients are 110, 146, and 138 μV/K for growth temperatures of 175, 200 and 250 °C, respectively, and a large value of the power factor 61.67 μW/cm-K2 is achieved for the film grown at 250 °C.

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References

  1. E. L. Bell, Science 321, 1457 (2008).

    Article  ADS  Google Scholar 

  2. D. M. Rowe, CRC Handbook of Thermoelectrics (CRC press, Boca Raton Florida, 1995).

    Book  Google Scholar 

  3. C. Wood, Rep. Prog. Phys. 51, 459 (1988).

    Article  ADS  Google Scholar 

  4. D. L. Lovett, Semimetals and Narrow-Band Gap Semiconductors (Pion, London, 1977).

    Google Scholar 

  5. V. A. Kulbachinskii et al., Phys. Status Solidi B 229, 1467 (2002).

    Article  ADS  Google Scholar 

  6. V. A. Kulbachinskii, Z. M. Dashevskii, M. Inoue, M. Sasaki, H. Negishi, W. X. Gao, P. Lostak, J. Horak and A. de Visser, Phys. Rev. B 52, 10915 (1995).

    Article  ADS  Google Scholar 

  7. B. Roy, B. R. Chakraborty, R. Bhattacharya and A. K. Dutta, Solid State Commun. 25, 617 (1978).

    Article  ADS  Google Scholar 

  8. M. Y. Kim and T. S. Oh, Mater. Trans. 51, 1909 (2010).

    Article  Google Scholar 

  9. L. M. Goncalve, P. Alpuim, A. G. Rolo and G. H. Correia, Thin Solid Films 519, 4152 (2011).

    Article  ADS  Google Scholar 

  10. C. Peng, Z. T. Song, F. Rao, L. C. Wu, M. Zhu and P. X. Yang, Appl. Phys. Lett. 99, 043105 (2011).

    Article  ADS  Google Scholar 

  11. J. H. Kim, J. Y. Choi, J. M. Bae, M. Y. Kim and T. S. Oh, Mater. Trans. 54, 618 (2013).

    Article  Google Scholar 

  12. Y. Kim, A. DiVenere, G. K. L. Wong, J. B. Ketterson, S. Cho and J. R. Meyer, J. Appl. Phys. 91, 715 (2002).

    Article  ADS  Google Scholar 

  13. T. Liu, H. Deng, H. Cao, W. Zhou, J. Zhang, J. Liu, P. Yang and J. Chu, J. Cryst. Growth 416, 78 (2015).

    Article  ADS  Google Scholar 

  14. L. M. Goncalves, P. Alpuim, A. G. Rolo and J. H. Correia, Thin Solid Films 519, 4152 (2011).

    Article  ADS  Google Scholar 

  15. B. Fang, Z. Zeng, X. Yan and Z. Hu, J. Mater. Sci.: Mater. Electron 24, 1105 (2013).

    Google Scholar 

  16. X. Zhang, Z. Zeng, C. Shen, Z. Zhang, Z. Wang, C. Lin and Z. Hu, J. Appl. Phys. 115, 024307 (2014).

    Article  ADS  Google Scholar 

  17. G. Bendt, S. Zastrov, K. Nielsch, P. S. Mandal, J. S. Barriga, O. Rader and S. Schulz, J. Mater. Chem. A 2, 8215 (2014).

    Article  Google Scholar 

  18. Z. Zeng et al., AIP Advance 3, 072112 (2013).

    Article  ADS  Google Scholar 

  19. D. Shi, R. Wang, G. Wang, C. Li, X. Shen and Q. Nie, Vacuum 145, 347 (2017).

    Article  ADS  Google Scholar 

  20. G. C. Sosso, S. Caravati and M. Bernasconi, J. Phys.: Condens. Matter 21, 095410 (2009).

    ADS  Google Scholar 

  21. L. Tirado-Mejía et al., Physica B 403, 4027 (2008).

    Article  ADS  Google Scholar 

  22. V. Kosyak et al., J. Alloys Compd. 682, 543 (2016).

    Article  Google Scholar 

  23. L. Xi, K. H. Chua, Y. Zhao, J. Zhang, Q. Xiong and Y. M. Lam, RSC Advances 2, 5243 (2012).

    Article  Google Scholar 

  24. Z. C. Feng, F. C. Hou, J. B. Webb, Z. X. Shen, E. Rusli, I. T. Ferguson and W. Lu, Thin Solid Films 516, 5493 (2008).

    Article  ADS  Google Scholar 

  25. A. Mzerd, D. Sayah, G. Brun, J. C. Tedenac and A. Boyer, J. Mater. Sci. Lett. 14, 194 (1995).

    Article  Google Scholar 

  26. C. I. Fornari, P. H. O. Rappl, S. L. Morelh˜ao and E. Abramof, J. Appl. Phys. 119, 165303 (2016).

    Article  ADS  Google Scholar 

  27. H. B. Zhang, H. L. Yu and G. W. Yang, EPL 95, 56002 (2011).

    Article  ADS  Google Scholar 

  28. P. Dutta, D. Bhoi, A. Midya, N. Khan, P. Mandal, S. Shanmukharao Samatham and V. Ganesan, Appl. Phys. Lett. 100, 251912 (2012).

    Article  ADS  Google Scholar 

  29. D. Das, K. Malik, A. K. Deb, S. Dhara, S. Bandyopadhyay and A. Banerjee, J. Appl. Phys. 118, 045102 (2015).

    Article  ADS  Google Scholar 

  30. H. Scherrer and S. Scherrer, Bismuth Telluride, Antimony Telluride, and Their Solid Solutions, chapter in CRC Handbook of Thermoelectrics, edited by D. M. Rowe (CRC press, Boca Raton, FL, 1995), Ch. 19.

  31. T. Chen, P. Fan, Z. Zheng, D. Zhang, X. Cai, G. Liang and Z. Cai, J. Electron. Mater. 41, 4 (2012).

    ADS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan, 44610, Korea

    Duong Van Thiet, Nguyen Van Quang, Nguyen Thi Minh Hai, Nguyen Thi Huong, Sunglae Cho, Duong Anh Tuan & Tran Van Tam

  2. Department of General Physics, School of Engineering Physics, Hanoi University of Science and Technology, Hanoi, Vietnam

    Duong Van Thiet & Dang Duc Dung

  3. Department of General Science, Quang Ninh Univerisity of Industry, Quang Ninh, Vietnam

    Duong Anh Tuan

  4. School of Chemical Engineering, University of Ulsan, Ulsan, 44610, Korea

    Tran Van Tam

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  1. Duong Van Thiet
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  2. Nguyen Van Quang
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  3. Nguyen Thi Minh Hai
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Correspondence to Sunglae Cho.

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Thiet, D.V., Quang, N.V., Hai, N.T.M. et al. Optimizing the Carrier Density and Thermoelectric Properties of Sb2Te3 Films by Using the Growth Temperature. J. Korean Phys. Soc. 72, 915–919 (2018). https://doi.org/10.3938/jkps.72.915

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  • DOI: https://doi.org/10.3938/jkps.72.915

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