Abstract
In this paper, the effect of surface passivation on the breakdown voltage of 4H-SiC Schottky barrier diode (SBD) was investigated. The SBDs having various passivation structures were fabricated. The passivation layers consist of 2 different ones: (1) thermal oxide with a post oxidation annealing, or no oxide by removing the oxide, and (2) plasma-enhanced chemical vapor deposited (PECVD) oxide, phosphosilicate glass (PSG), or polyimide (PI). The results show that the SBD having a sacrificial oxide as 1st passivation layer and a PI as 2nd passivation layer exhibited lower leakage current by a factor of more than 2 for the reverse bias above 1000 V than the others and its breakdown voltage (VBR) was 2254 V, which corresponds to 93% VBR of a parallel-plane ideal device.
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A correction to this article is available at http://dx.doi.org/10.3938/jkps.71.1075
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Kang, I.H., Na, M.K., Seok, O. et al. Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes. J. Korean Phys. Soc. 71, 707–710 (2017). https://doi.org/10.3938/jkps.71.707
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DOI: https://doi.org/10.3938/jkps.71.707