Formation of III–V semiconductor nanotubes on an InP substrate by using the strain-induced self-rolling Method

Abstract

Semiconductor nanotube structures have attracted much interest for building blocks of future nanoscale electronic and optical devices. Here, we investigate the structural properties of straininduced self-rolled III–V semiconductor nanotubes. The III–V semiconductor structures for nanotube formation were grown on InP substrates. The bilayer and the quantum-well structures are grown using a metalorganic chemical-vapor deposition system and were fabricated into selfrolled nanotubes. For the self-rolling process, ternary In _x Ga_1−x As layers were used to produce a lattice-mismatch strain in the nanotube membrane. The experimental observations of the nanotube structures are discussed.