Skip to main content
SpringerLink
Log in

Shallow n-type doping by transition-metal impurities (Hf, Zr, or Ti) in amorphous In2O3

  • Published:
Journal of the Korean Physical Society Aims and scope Submit manuscript

Abstract

Through first-principles electronic-structure calculations, we suggest that because the transitionmetal (TM)-d levels are located deep within the conduction band, TM (M = Hf, Zr, or Ti)-doped amorphous In2O3 (a-In2O3) can provide shallow donors, even though the effective mass of the a-In2O3 is slightly increased. We examined the microscopic structure of the doped oxides. The effective coordination number of In is little changed by the doping. The atomic strtuctures of Sn, Hf, and Zr are similar, but the coordination number of Ti is smaller than those of the other dopants. The effective masses of the electron of the TM-doped a-In2O3 system are larger than those of the undoped a-In2O3 and Sn-doped a-In2O3.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Y. Shigesato and D. C. Paine, Appl. Phys. Lett. 62, 1268 (1993).

    Article  ADS  Google Scholar 

  2. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, H. Hirano and H. Hosono, Science 300, 1269 (2003).

    Article  ADS  Google Scholar 

  3. T. Kamiya and H. Hosono, NPG Asia Mater. 2, 1522 (2010).

    Article  Google Scholar 

  4. J. K. Jeong, Semicond. Sci. Techol. 26, 034008 (2011).

    Article  ADS  Google Scholar 

  5. J. S. Park, W.-J. Maeng, H.-S. Kim and J.-S. Park, Thin Solid Film 6, 1679 (2011).

    Google Scholar 

  6. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, Nature 488, 432 (2004).

    Google Scholar 

  7. P. E. Blöchl, Phys. Rev. B 50, 17953 (1994).

    Article  ADS  Google Scholar 

  8. G. Kresse and J. Furthmuller, Phys. Rev. B 54, 11169 (1996).

    Article  ADS  Google Scholar 

  9. J. P. Perdew, K. Burke and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).

    Article  ADS  Google Scholar 

  10. R. Hoppe, Angew. Chem. Int. Ed. 9, 25 (1970).

    Article  Google Scholar 

  11. R. Hoppe, Z. Kristallogr. 150, 23 (1979).

    Article  Google Scholar 

  12. D. Kim, M. Kim and C. H. Park, submitted.

  13. R. D. Shannon, Acta Crystallogr., Sect. A 32, 751 (1976), doi:/10.1107/s0567739476001551.

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Research Center for Dielectric and Advanced Matter Physics and Department of Physics, Pusan National University, Busan, 609-735, Korea

    Doukyun Kim & Maengsuk Kim

  2. Research Center for Dielectric and Advanced Matter Physics and Department of Physics Education, Pusan National University, Busan, 609-735, Korea

    Chul Hong Park

Authors
  1. Doukyun Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Maengsuk Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Chul Hong Park
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Chul Hong Park.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kim, D., Kim, M. & Park, C.H. Shallow n-type doping by transition-metal impurities (Hf, Zr, or Ti) in amorphous In2O3 . Journal of the Korean Physical Society 61, 933–937 (2012). https://doi.org/10.3938/jkps.61.933

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3938/jkps.61.933

Keywords

Search

Navigation