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The effect of annealing temperature on the piezoelectric and dielectric properties of lead-free Bi0.5(Na0.85K0.15)0.5TiO3 thin films

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Abstract

We fabricated Bi0.5(Na0.85K0.15)0.5TiO3 (BNKT) lead-free thin films on Pt(111)/TiO2/SiO2/Si(100) substrates by using a chemical solution deposition method. The BNKT thin films were annealed at 650, 700, 750, or 800 °C in an O2 atmosphere. X-ray diffraction patterns revealed a pure perovskite structure at annealing temperatures from 650 to 800 °C. A field emission electron microscope study revealed an increase in grain size with increasing annealing temperature. BNKT thin films annealed at 700 °C had a high remnant effective piezoelectric coefficient of 63.6 pm/V and a low leakage current density of 5.15 × 10−6 A/cm2.

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Authors and Affiliations

  1. Department of Physics and Energy Harvest-storage Research Center, University of Ulsan, Ulsan, 680-749, Korea

    Sung Sik Won, Chang Won Ahn & Ill Won Kim

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  1. Sung Sik Won
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  2. Chang Won Ahn
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  3. Ill Won Kim
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Correspondence to Ill Won Kim.

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Won, S.S., Ahn, C.W. & Kim, I.W. The effect of annealing temperature on the piezoelectric and dielectric properties of lead-free Bi0.5(Na0.85K0.15)0.5TiO3 thin films. Journal of the Korean Physical Society 61, 928–932 (2012). https://doi.org/10.3938/jkps.61.928

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  • DOI: https://doi.org/10.3938/jkps.61.928

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