Abstract
Zinc oxide (ZnO)-based thin-film transistors (TFTs) with top gate structures were produced. Radio-frequency-magnetron sputtering was used to deposit indium tin oxide for both the source and the drain electrodes and n-type undoped ZnO at high oxygen partial pressures for the active layer. Direct-current-magnetron sputtering and plasma enhanced chemical vapor deposition were used to deposit Al for the gate electrode and the SiN gate dielectric, respectively. The devices operated in the enhancement mode with a threshold voltage, mobility, on-off ratio and sub-threshold slope of 9 V, 0.05 cm2/Vs, ∼5 × 105, and 1.3 V/decade, respectively.
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References
Y. J. Li, Y. W. Kwon, M. Jones, Y. W. Heo, J. Zhou, S. C. Luo, P. H. Holloway, E. Douglas, D. P. Norton, Z. Park and S. Li, Semicond. Sci. Technol. 20, 720 (2005).
W. B. Jackson, R. L. Hoffman and G. S. Herman, Appl. Phys. Lett. 89, 193503 (2005).
D. C. Paine, B. Yaglioglu, Z. Beiley and S. Lee, Thin Solid Films 516, 5894 (2008).
J-S. Park, J. K. Jeong, Y-G. Mo, H. D. Kim and C-J. Kim, Appl. Phys. Lett. 93, 033513 (2008).
J. H. Chung, J. Y. Lee, H. S. Kim, N. W. Jang and J. H. Kim, Thin Solid Films 516, 5597 (2008).
L. Zhang, H. Zhang, Y. Bai, J. W. Ma, J. Cao, X. Y. Jiang and Z. L. Zhang, Solid State Commun. 146, 387 (2008).
K. Jang, H. Park, S. Jung, N. V. Duy, Y. Kim, J. Cho, H. Choi, T. Kwon, W. Lee, D. Gong, S. Park, J. Yi, D. Kim and H. Kim, Thin Solid Films 518, 2808 (2010).
S. Bang, S. Lee, S. Jeon, S. Kwon, W. Jeong, H. Kim, I. Shin, H. J. Chang, H-H. Park and H. Jeon, Semicond. Sci. Technol. 24, 025008 (2009).
R. Navamathavan, C. K. Choi, E-J. Yang, J-H. Lim, DK. Hwang and S-J. Park, Solid-State Electron. 52, 813 (2008).
J-S. Park, J. K. Jeong, Y-G. Mo and H. D. Kim, Appl. Phys. Lett. 90, 262106 (2007).
N. G. Cho, D. H. Kim, H-G. Kim, J-M. Hong and I-D. Kim, Thin Solid Films 518, 2843 (2010).
L. Zhang, J. Li, X. W. Zhang, D. B. Yu, H. P. L. Khizarul- Haq, X. Y. Jiang and Z. L. Zhang, Curr. Appl. Phys. 10, 1306 (2010).
D-J. Yun and S-W. Rhee, Thin Solid Films 517, 4644 (2009).
J. H. Jun, B. Park, K. Cho and S. Kim, Nanotechnology 20, 505201 (2009).
J. K. Jeong, H. W. Yang, J. H. Jeong, Y-G. Mo and H. D. Kim, Appl. Phys. Lett. 93, 123508 (2008).
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Yun, EJ., Moon, H.J., Bae, B.S. et al. Development of ZnO-based thin-film transistors with top gate structures. Journal of the Korean Physical Society 60, 55–58 (2012). https://doi.org/10.3938/jkps.60.55
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DOI: https://doi.org/10.3938/jkps.60.55