Abstract
The catalyst-free growth of ZnO nanostructures on Si and SiO2/Si substrates as a function of substrate temperature was carried out using a thermal evaporation method. We observed that the shapes and the morphologies of the ZnO nanostructures could be controlled by using the substrate temperature and the presence of an oxide layer on the surface of the substrate. The shape of the ZnO nanostructure was changed from an embossed nanocantilever to a nanowire as the growth temperature was decreased from 500 °C to 430 °C. At 360 °C, a winding stem-like nanostructure with thin and short branch nanowires on the facet of the nanostructure was produced. In particular, at a growth temperature of 430 °C, a ZnO buffer layer was formed during the initial growth when an Si substrate was used. However, no ZnO buffer layer was observed when a SiO2/Si substrate was used. The formation of a buffer layer significantly affected the crystalline structure. Defects were observed in the embossed nanocantilevers and the nanowires grown on SiO2/Si but not in those grown on Si.
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References
Y. Wu, H. Yan and P. Yang, Chem. Eur. J. 8, 1260 (2002).
J. Hu, T. W. Odom and C. M. Lieber, Acc. Chem. Res. 32, 435 (1999).
G. Y. Adachi and N. Imanaka, Chem. Rev. 98, 1479 (1998).
C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo and D. Wang, Nano Lett. 7, 1003 (2007).
J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth and S. Mathur, J. Phys. Chem. C 112, 14639 (2008).
H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo and P. Yang, Science 292, 1897 (2001).
J. X. Wang, X. W. Sun, Y. Yang, H. Huang, Y. C. Lee, O. K. Tan and L. Vayssieres, Nanotechnology 17, 4995 (2006).
J. X. Park, D. E. Song and S. S. Kim, Nanotechnology 19, 105503 (2008).
A. Nadarajah, R. C. Word, J. Meiss and R. Konenkamp, Nano Lett. 8, 534 (2008).
X. W. Sun, J. Z. Huang, J. X. Wang and Z. Xu, Nano Lett. 8, 1219 (2008).
M. Law, E. Greene, J. C. Johnson, R. Saykally and P. Yang, Nat. Mater. 4, 455 (2005).
J. B. Baxter and E. S. Aydila, Appl. Phys. Lett. 86, 053114 (2005).
M-Y. Choi, D. H. Choi, M-J. Jin, I. S. Kim, S-H. Kim, J-Y. Choi, S. Y. Lee, J. M. Kim and S-W. Kim, Adv. Mater. 21, 2185 (2009).
B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki and N. Usami, Appl. Phys. Lett. 83, 1635 (2003).
W. I. Park, D. H. Kim, S-W. Jung and G-C. Yi, Appl. Phys. Lett. 80, 4232 (2002).
H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton and J. Lin, Appl. Phys. Lett. 86, 243503 (2005).
H. Q. Yang, Y. Z. Song, L. Li, J. H. Ma, D. C. Chen, S. L. Mai and H. Zhao, Cryst. Growth Des. 8, 1039 (2008).
Y. Sun, G. M. Fuge and M. N. R. Ashfold, Chem. Phys. Lett. 396, 21 (2004).
S. Li, X. Zhang, B. Yan and T. Yu, Nanotechnology 20, 495604 (2009).
B. D. Yao, Y. F. Chan and N. Wang, Appl. Phys. Lett. 81, 757 (2002).
A. Fontcuberta-i-Morral, J. Arbiol, J. D. Prades, A. Cirera and J. R. Morante, Appl. Phys. Lett. 19, 1347 (2007).
J. D. Pardes, J. Arbiol, A. Cirera, J. R. Morante and A. Fontcuberta-i-Morral, Appl. Phys. Lett. 91, 123107 (2007).
M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber and P. Yang, Adv. Mater. 13, 113 (2001).
C. Y. Geng, Y. Jiang, Y. Yao, X. M. Meng, J. A. Zapien, C. S. Lee, Y. Lifshitz and S. T. Lee, Adv. Funct. Mater. 14, 589 (2004).
L. S. Wang, X. Z. Zhang, S. Q. Zhao, G. T. Zhou, Y. L. Zhou and J. J. Qi, Appl. Phys. Lett. 86, 024108 (2005).
J. Jie, G. Wang, Y. Chen, X. Han, Q. Wang, B. Xu and J. G. Hou, Appl. Phys. lett. 86, 031909 (2005).
Y. Sun, Q. Zhao, J. Gao, R. Zhu, X. Wang, J. Xu, L. Chen, J. Zhang and D. Yu, Cryst. Eng. Comm. 13, 606 (2011).
S. Muthukumar, C. R. Gorla, N. W. Emanetoglu, S. Liang and Y. Lu, J. Cryst. Growth 225, 197 (2001).
Z. L. Wang, J. Phys. Condens. Matter 16, R829 (2004).
J. S. Jeong, J. Y. Lee, J. H. Cho, C. J. Lee, S-J. An, G-C. Yi and R. Gronsky, Nanotechnology 16, 2455 (2005).
Z. L. Wang, X. Y. Kong and J. M. Zuo, Phys. Rev. Lett. 91, 185502 (2003).
X. D. Wang, Y. Ding, C. J. Summers and Z. L. Wang, J. Phys. Chem. B 108, 8773 (2004).
J. S. Jeong and J. Y. Lee, Nanotechnology 21, 475603 (2010).
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Kim, H.J., Park, S.H., Lee, WJ. et al. Temperature-dependent catalyst-free growth of ZnO nanostructures on Si and SiO2/Si substrates via thermal evaporation. Journal of the Korean Physical Society 60, 1877–1885 (2012). https://doi.org/10.3938/jkps.60.1877
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DOI: https://doi.org/10.3938/jkps.60.1877