Abstract
This paper reports the results of modeling of optical and electrical characteristics of InAs/GaSb type II strained layer superlattice (SLS) for the mid-wave infrared detection with n-on-p polarity. The band gap calculation of the SLS was conducted as a function of the InAs and GaSb thickness, using a modified Kronig-Penny model. The cut off wavelength of the fabricated diode was ~ 6 μm (~ 0.2 eV) at 120 K. The product of zero-bias resistance and area (R0A) as a function of an applied bias was investigated in detail to analyze the dark current mechanisms. The thermal diffusion and generation-recombination current were dominant factors under low positive bias. However, as the reverse bias voltage increased, the trap assisted component became one of the dominant dark current factors.
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References
A. Rogalski and P. Martyniuk, Infrared Phys. Technol. 48, 39 (2006).
M. Razeghi, S. Abdollahi Pour, E. K. Huang, G. Chen, A. Haddadi and B. M. Nguyen, Opto-Electron. Rev. 19, 261 (2011).
M. Herrera, M. Chi, M. Bonds, N. D. Browning, J. N. Woolman, R. E. Kvaas, S. F. Harris, D. R. Rhiger and C. J. Hill, Appl. Phys. Lett. 93, 093106 (2008).
O. Salihoglu, A. Muti, K. Kutluer, T. Tansel, R. Turan, C, Kocabas and A. Aydinli, J. Appl. Phys. 111, 074509 (2012).
A. Hood, P. Delaunay, D. Hoffman, B. Nguyen, Y. Wei, M. Razeghi and V. Nathan, Appl. Phys. Lett. 90, 233513 (2007).
H. S. Kim, E. Plis, A. Khoshakhlagh, S. Myers, N. Gautam, Y. D. Sharma, L. R. Dawson, S. Krishna, S. J. Lee and S. K. Noh, Appl. Phys. Lett. 96, 033502 (2010).
L. L. Li, W. Xu, J. Zhang and Y. L. Shi, J. Appl. Phys. 105, 013115 (2009).
E. Plis, S. J. Lee, Zh. Zhu, A. Amtout and S. Krishna, IEEE J. Sel. Top. Quantum Electron. 12, 1269 (2006).
Q. K. Yang, F. Fuchs, J. Schmitz and W. Pletschen, Appl. Phys. Lett. 81, 4757 (2002).
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Kim, H.S. Optical and Electrical Study of InAs/GaSb Type II Strained Layer Superlattice for Mid-wave Infrared Detector. J. Korean Phys. Soc. 74, 358–362 (2019). https://doi.org/10.3938/jkps.74.358
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DOI: https://doi.org/10.3938/jkps.74.358