Coating of Si3N4 with HAp via atomic layer deposition

@article{ART002991776},
author={ Seniz R. Kushan Akin },
title={Coating of Si3N4 with HAp via atomic layer deposition},
journal={Journal of Ceramic Processing Research},
issn={1229-9162},
year={2023},
volume={24},
number={4},
pages={736-741},
doi={10.36410/jcpr.2023.24.4.736},
url={http://dx.doi.org/10.36410/jcpr.2023.24.4.736}

TY - JOUR
AU - Seniz R. Kushan Akin
TI - Coating of Si3N4 with HAp via atomic layer deposition
T2 - Journal of Ceramic Processing Research
PY - 2023
VL - 24
IS - 4
PB - 한양대학교 청정에너지연구소
SP - 736-741
SN - 1229-9162
AB - Silicon nitride (Si3N4) is an attractive implant material, particularly in orthopedic surgery. Although it has only been on themarket for spinal fusion surgery requirements so far, it is also a promising candidate for other implant applications whereload-bearing is crucial. In this study, we aimed to examine the potential of making the material surface more advantageousfor various implant applications by coating it with a very thin hydroxyapatite (HAp) layer using the atomic layer deposition(ALD) method. This was done to improve the material's bioactivity without sacrificing its mechanical properties. Characterization results showed that using a 3:1 CaO:PO4 ALD cycle ratio resulted in the formation of very fine crystallineHAp after heat treatment at 500 °C. The bioactivity assessment made by immersing the coated film in SBF revealed HApformation on the surface, and it was observed that the bioactivity of this surface improved compared to the uncoated one.
KW - Silicon nitride, Atomic layer deposition, Hydroxyapatite.
DO - 10.36410/jcpr.2023.24.4.736
UR - http://dx.doi.org/10.36410/jcpr.2023.24.4.736
ER -

Seniz R. Kushan Akin (2023). Coating of Si3N4 with HAp via atomic layer deposition. Journal of Ceramic Processing Research, 24( 4), 736- 741.

Seniz R. Kushan Akin . 2023, “Coating of Si3N4 with HAp via atomic layer deposition”, Journal of Ceramic Processing Research, vol. 24, no. 4, pp. 736-741. Available from: doi:10.36410/jcpr.2023.24.4.736

Seniz R. Kushan Akin “Coating of Si3N4 with HAp via atomic layer deposition” Journal of Ceramic Processing Research 24.4 pp. 736-741 (2023): 736.

Seniz R. Kushan Akin . Coating of Si3N4 with HAp via atomic layer deposition Journal of Ceramic Processing Research [Internet]. 2023; 24( 4), : 736-741. Available from: doi:10.36410/jcpr.2023.24.4.736

Seniz R. Kushan Akin . “Coating of Si3N4 with HAp via atomic layer deposition” Journal of Ceramic Processing Research 24, no.4 (2023): 736-741. doi: 10.36410/jcpr.2023.24.4.736

홈 권호 목록 논문 목록 논문 상세

Coating of Si3N4 with HAp via atomic layer deposition

Journal of Ceramic Processing Research

약어 : J. Ceram. Process. Res.

2023, vol.24, no.4, pp.736 - 741

DOI : 10.36410/jcpr.2023.24.4.736

발행기관 : 한양대학교 청정에너지연구소

연구분야 : 재료공학

Seniz R. Kushan Akin¹

¹Cankaya University

인용한 논문 수 : 1 서지 간략 보기

초록

Silicon nitride (Si3N4) is an attractive implant material, particularly in orthopedic surgery. Although it has only been on themarket for spinal fusion surgery requirements so far, it is also a promising candidate for other implant applications whereload-bearing is crucial. In this study, we aimed to examine the potential of making the material surface more advantageousfor various implant applications by coating it with a very thin hydroxyapatite (HAp) layer using the atomic layer deposition(ALD) method. This was done to improve the material's bioactivity without sacrificing its mechanical properties. Characterization results showed that using a 3:1 CaO:PO4 ALD cycle ratio resulted in the formation of very fine crystallineHAp after heat treatment at 500 °C. The bioactivity assessment made by immersing the coated film in SBF revealed HApformation on the surface, and it was observed that the bioactivity of this surface improved compared to the uncoated one.