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@article{ART001464663},
author={ 김경환 },
title={ The preparation of indium tin oxide films as a function of oxygen gas flow rate by a facing target sputtering system },
journal={ Journal of Ceramic Processing Research },
issn={1229-9162},
year={2007},
number={1},
pages={19 - 21},
doi={10.36410/jcpr.2007.8.1.19},
url={http://dx.doi.org/10.36410/jcpr.2007.8.1.19}

TY - JOUR
AU - 김경환 TI - The preparation of indium tin oxide films as a function of oxygen gas flow rate by a facing target sputtering system
T2 - Journal of Ceramic Processing Research
PY - 2007
VL - 8
IS - 1
PB - 한양대학교 청정에너지연구소
SP - 19 - 21
SN - 1229-9162
AB - Indium tin oxide (ITO) thin films for use as cathode electrodes in top-emitting organic light-emitting diodes (TOLEDs) were prepared by a facing targets sputtering (FTS) system under different sputtering conditions, which were varying oxygen gas flow rate, input current at room temperature on glass slide substrates. Then a function of sputtering conditions, the electrical and optical properties of prepared ITO thin films was evaluated. In the results, with increasing oxygen gas flow rate 0.1 sccm to 0.7 sccm, resistivities of ITO thin films increased with a decrease in carrier concentration, with an oxygen gas flow rate above 0.3 sccm. Transmittance of prepared ITO thin films was improved at increasing oxygen gas flow rate 0.1 sccm to 0.7 sccm. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity 6.19×10−4 Ω·cm, carrier mobility 22.9 cm2/Vs, carrier concentration 4.41×1020 cm−3 and transmittance over 80% of ITO thin film prepared at working pressure 133 mPa, input current 0.4A without any substrate heating.
KW - TOLED, Facing Target sputtering, ITO, TCO.
DO - 10.36410/jcpr.2007.8.1.19
UR - http://dx.doi.org/10.36410/jcpr.2007.8.1.19
ER -

김경환 (2007). The preparation of indium tin oxide films as a function of oxygen gas flow rate by a facing target sputtering system. Journal of Ceramic Processing Research, 8(1), 19 - 21.

김경환 . 2007, “The preparation of indium tin oxide films as a function of oxygen gas flow rate by a facing target sputtering system”, vol.8, no.1, pp. 19 - 21. Available from: doi:10.36410/jcpr.2007.8.1.19

김경환. “The preparation of indium tin oxide films as a function of oxygen gas flow rate by a facing target sputtering system“ Journal of Ceramic Processing Research 8.1 pp. 19 - 21. (2007): 19.

김경환 . The preparation of indium tin oxide films as a function of oxygen gas flow rate by a facing target sputtering system Journal of Ceramic Processing Research [Internet]. 2007; 8(1), : 19 - 21. Available from: doi:10.36410/jcpr.2007.8.1.19

김경환 . “The preparation of indium tin oxide films as a function of oxygen gas flow rate by a facing target sputtering system“ Journal of Ceramic Processing Research 8, no.1, (2007): 19 - 21. doi: :10.36410/jcpr.2007.8.1.19