28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses

Sourav De; Yannick Raffel; Sunanda Thunder; Franz Müller; Maximilian Lederer; Thomas Kaempfe

doi:10.36227/techrxiv.21532533.v1

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28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses

Sourav De ,
Yannick Raffel ,
Sunanda Thunder ,
Franz Müller ,
Maximilian Lederer ,
Thomas Kaempfe ,
Masud S K Rana ,
Luca Pirro ,
Konrad Seidel ,
Bhaswar Chakrabarti

Abstract

This paper presents 28 nm high-k-metal gate (HKMG) based ferroelectric field effect transistor (FeFET) devices fabricated on 300mm wafers at GlobalFoundries’. The fabricated devices demonstrate 103 WRITE-endurance cycles and 104 seconds of data-retention capability at 85°C.