Abstract
Technology computer-aided design (TCAD) semiconductor device simulators
solve partial differential equations (PDE) using the finite volume
method (FVM), or related methods. While this approach has been in use
over several decades, its methods continue to be extended, and are still
applicable for investigating novel devices. In this paper, we present an
element edge based (EEB) FVM discretization approach suitable for
capturing vector-field effects. Drawing from a 2D approach in the
literature, we have extended this method to 3D. We implemented this
method in a TCAD semiconductor device simulator, which uses a
generalized PDE (GPDE) approach to simulate de- vices with the FVM. We
describe how our EEB method is compatible with the GPDE approach,
allowing the modeling of vector effects using scripting. This method is
applied to solve polarization effects in a 3D ferro capacitor, and a 2D
ferroelectric field-effect transistor. An example for field- dependent
mobility in a 3D MOSFET is also presented.