Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
- Wulf, W.A.; McKee, S.A. Hitting the memory wall: Implications of the obvious. ACM SIGARCH Comput. Archit. News 1995, 23, 20–24. [Google Scholar] [CrossRef]
- Furber, S. Large-scale neuromorphic computing systems. J. Neural Eng. 2016, 13, 051001. [Google Scholar] [CrossRef]
- Schliebs, S.; Kasabov, N. Evolving spiking neural network—A survey. Evol. Syst. 2013, 4, 87–98. [Google Scholar] [CrossRef] [Green Version]
- Lee, D.; Kwak, M.; Moon, K.; Choi, W.; Park, J.; Yoo, J.; Song, J.; Lim, S.; Sung, C.; Banerjee, W.; et al. Various threshold switching devices for integrate and fire neuron applications. Adv. Electron. Mater. 2019, 5, 1800866. [Google Scholar] [CrossRef]
- Pfeiffer, M.; Pfeil, T. Deep learning with spiking neurons: Opportunities and challenges. Front. Neurosci. 2018, 12, 774. [Google Scholar] [CrossRef] [Green Version]
- Ghosh-dastidar, S.; Adeli, H. Spiking neural networks. Int. J. Neural Syst. 2009, 19, 295–308. [Google Scholar] [CrossRef] [Green Version]
- Strukov, D.B.; Snider, G.S.; Stewart, D.R.; Williams, R.S. The missing memristor found. Nature 2008, 453, 80–83. [Google Scholar] [CrossRef] [PubMed]
- Wijesinghe, P.; Ankit, A.; Sengupta, A.; Roy, K. An all-memristor deep spiking neural computing system: A step toward realizing the low-power stochastic brain. IEEE Trans. Emerg. Top. Comput. Intell. 2018, 2, 345–358. [Google Scholar] [CrossRef]
- Jiang, W.; Xie, B.; Liu, C.-C.; Shi, Y. Integrating memristors and CMOS for better AI. Nat. Electron. 2019, 2, 376–377. [Google Scholar] [CrossRef]
- Sun, L.; Zhang, Y.; Han, G.; Hwang, G.; Jiang, J.; Joo, B.; Watanabe, K.; Taniguchi, T.; Kim, Y.M.; Yu, W.J.; et al. Self-selective van der Waals heterostructures for large scale memory array. Nat. Commun. 2019, 10, 3161. [Google Scholar] [CrossRef] [Green Version]
- Liu, C.; Chen, H.; Wang, S.; Liu, Q.; Jiang, Y.G.; Zhang, D.W.; Liu, M.; Zhou, P. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 2020, 15, 545–557. [Google Scholar] [CrossRef] [PubMed]
- Yan, X.; Zhao, J.; Liu, S.; Zhou, Z.; Liu, Q.; Chen, J.; Liu, X.Y. Memristor with Ag-cluster-doped TiO2 films as artificial synapse for neuroinspired computing. Adv. Funct. Mater. 2018, 28, 1705320. [Google Scholar] [CrossRef]
- Huh, W.; Lee, D.; Lee, C.H. Memristors based on 2D materials as an artificial synapse for neuromorphic electronics. Adv. Mater. 2020, 32, e2002092. [Google Scholar] [CrossRef] [PubMed]
- Zhao, Y.Y.; Sun, W.J.; Wang, J.; He, J.H.; Li, H.; Xu, Q.F.; Li, N.J.; Chen, D.Y.; Lu, J.M. All-inorganic ionic polymer-based memristor for high-performance and flexible artificial synapse. Adv. Funct. Mater. 2020, 30, 2004245. [Google Scholar] [CrossRef]
- Ryu, H.; Kim, S. Pseudo-interface switching of a two-terminal TaOx/HfO2 synaptic device for neuromorphic applications. Nanomaterials 2020, 10, 1550. [Google Scholar] [CrossRef]
- Ryu, H.; Kim, S. Synaptic characteristics from homogeneous resistive switching in Pt/Al2O3/TiN stack. Nanomaterials 2020, 10, 2055. [Google Scholar] [CrossRef]
- Tuma, T.; Pantazi, A.; Le Gallo, M.; Sebastian, A.; Eleftheriou, E. Stochastic phase-change neurons. Nat. Nanotechnol. 2016, 11, 693–699. [Google Scholar] [CrossRef]
- Zhang, X.; Wang, W.; Liu, Q.; Zhao, X.; Wei, J.; Cao, R.; Yao, Z.; Zhu, X.; Zhang, F.; Lv, H.; et al. An artificial neuron based on a threshold switching memristor. IEEE Electron Device Lett. 2018, 39, 308–311. [Google Scholar] [CrossRef]
- Kalita, H.; Krishnaprasad, A.; Choudhary, N.; Das, S.; Dev, D.; Ding, Y.; Tetard, L.; Chung, H.-S.; Jung, Y.; Roy, T. Artificial neuron using vertical MoS2/graphene threshold switching memristors. Sci. Rep. 2019, 9, 53. [Google Scholar] [CrossRef] [Green Version]
- Chen, Y.; Wang, Y.; Luo, Y.; Liu, X.; Wang, Y.; Gao, F.; Xu, J.; Hu, E.; Samanta, S.; Wan, X.; et al. Realization of artificial neuron using Mxene bi-directional threshold switching memristors. IEEE Electron Device Lett. 2019, 40, 1686–1689. [Google Scholar] [CrossRef]
- Dev, D.; Krishnaprasad, A.; Shawkat, M.S.; He, Z.; Das, S.; Fan, D.; Chung, H.-S.; Jung, Y.; Roy, T. 2D MoS2-based threshold switching memristor for artificial neuron. IEEE Electron Device Lett. 2020, 41, 936–939. [Google Scholar] [CrossRef]
- Zhang, X.; Zhuo, Y.; Luo, Q.; Wu, Z.; Midya, R.; Wang, Z.; Song, W.; Wang, R.; Upadhyay, N.K.; Fang, Y.; et al. An artificial spiking afferent nerve based on Mott memristors for neurorobotics. Nat. Commun. 2020, 11, 51. [Google Scholar] [CrossRef] [PubMed] [Green Version]
- Zhang, P.; Li, S.; Bo, Y.; Liu, X. Collective dynamics of capacitively coupled oscillators based on NbO2 memristors. J. Appl. Phys. 2019, 126, 125112. [Google Scholar] [CrossRef]
- Bo, Y.; Zhang, P.; Luo, Z.; Li, S.; Song, J.; Liu, X. NbO2 memristive neurons for burst-based perceptron. Adv. Intell. Syst. 2020, 2, 2000066. [Google Scholar] [CrossRef]
- Liu, Y.; Guo, J.; Zhu, E.; Liao, L.; Lee, S.-J.; Ding, M.; Shakir, I.; Gambin, V.; Huang, Y.; Duan, X. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature 2018, 557, 696–700. [Google Scholar] [CrossRef] [PubMed]
- Gong, Y.; Lin, J.; Wang, X.; Shi, G.; Lei, S.; Lin, Z.; Zou, X.; Ye, G.; Vajtai, R.; Yakobson, B.I.; et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 2014, 13, 1135–1142. [Google Scholar] [CrossRef] [Green Version]
- Lanza, M.; Wong, H.S.P.; Pop, E.; Ielmini, D.; Strukov, D.; Regan, B.C.; Larcher, L.; Villena, M.A.; Yang, J.J.; Goux, L.; et al. Recommended methods to study resistive switching devices. Adv. Electron. Mater. 2019, 5, 1800143. [Google Scholar] [CrossRef] [Green Version]
- Hui, F.; Liu, P.; Hodge, S.A.; Carey, T.; Wen, C.; Torrisi, F.; Galhena, D.T.L.; Tomarchio, F.; Lin, Y.; Moreno, E.; et al. In situ observation of low-power nano-synaptic response in graphene oxide using conductive atomic force microscopy. Small 2021, 17, e2101100. [Google Scholar] [CrossRef] [PubMed]
- Rasool, K.; Helal, M.; Ali, A.; Ren, C.E.; Gogotsi, Y.; Mahmoud, K.A. Antibacterial activity of Ti(3)C(2)Tx MXene. ACS Nano 2016, 10, 3674–3684. [Google Scholar] [CrossRef] [Green Version]
- Hai, Y.; Jiang, S.; Zhou, C.; Sun, P.; Huang, Y.; Niu, S. Fire-safe unsaturated polyester resin nanocomposites based on MAX and MXene: A comparative investigation of their properties and mechanism of fire retardancy. Dalton Trans. 2020, 49, 5803–5814. [Google Scholar] [CrossRef]
- Zhan, X.; Si, C.; Zhou, J.; Sun, Z. MXene and MXene-based composites: Synthesis, properties and environment-related applications. Nanoscale Horiz. 2020, 5, 235–258. [Google Scholar] [CrossRef]
- Zhang, X.; Zhang, Z.; Zhou, Z. MXene-based materials for electrochemical energy storage. J. Energy Chem. 2018, 27, 73–85. [Google Scholar] [CrossRef] [Green Version]
- Yan, X.; Wang, K.; Zhao, J.; Zhou, Z.; Wang, H.; Wang, J.; Zhang, L.; Li, X.; Xiao, Z.; Zhao, Q.; et al. A new memristor with 2D Ti3 C2 Tx MXene flakes as an artificial bio-synapse. Small 2019, 15, e1900107. [Google Scholar] [CrossRef]
- Lian, X.; Shen, X.; Zhang, M.; Xu, J.; Gao, F.; Wan, X.; Hu, E.; Guo, Y.; Zhao, J.; Tong, Y. Resistance switching characteristics and mechanisms of MXene/SiO2 structure-based memristor. Appl. Phys. Lett. 2019, 115, 063501. [Google Scholar] [CrossRef]
- Wang, K.; Chen, J.; Yan, X. MXene Ti3C2 memristor for neuromorphic behavior and decimal arithmetic operation applications. Nano Energy 2021, 79, 105453. [Google Scholar] [CrossRef]
- Wan, X.; Xu, W.; Zhang, M.; He, N.; Lian, X.; Hu, E.; Xu, J.; Tong, Y. Unsupervised learning implemented by Ti3C2-MXene-based memristive neuromorphic system. ACS Appl. Electron. Mater. 2020, 2, 3497–3501. [Google Scholar] [CrossRef]
- Wang, Y.; Shen, D.; Liang, Y.; Zhao, Y.; Chen, X.; Zhou, L.; Zhang, M.; Xu, J.; Liu, X.; Hu, E.; et al. Emulation of multiple-functional synapses using V2C memristors with coexistence of resistive and threshold switching. Mater. Sci. Semicond. Process. 2021, 135, 106123. [Google Scholar] [CrossRef]
- Chen, X.; Wang, Y.; Shen, D.; Zhang, M.; Zhao, Y.; Zhou, L.; Qin, Q.; Zhang, Q.; He, N.; Wang, M.; et al. First-principles Calculation and Experimental Investigation of a Three-atoms-type MXene V2C and Its Effects on Memristive Devices. IEEE Trans. Nanotechnol. 2021, 20, 6. [Google Scholar] [CrossRef]
- He, N.; Zhang, Q.; Tao, L.; Chen, X.; Qin, Q.; Liu, X.; Lian, X.; Wan, X.; Hu, E.; Xu, J.; et al. V2C-based memristor for applications of low power electronic synapse. IEEE Electron Device Lett. 2021, 42, 319–322. [Google Scholar] [CrossRef]
- Sun, K.; Chen, J.; Yan, X. The future of memristors: Materials engineering and neural networks. Adv. Funct. Mater. 2020, 31, 2006773. [Google Scholar] [CrossRef]
- Wu, M.; Wang, B.; Hu, Q.; Wang, L.; Zhou, A. The synthesis process and thermal stability of V(2)C MXene. Materials 2018, 11, 2112. [Google Scholar] [CrossRef] [Green Version]
- Hassanzadeh-Tabrizi, S.A.; Davoodi, D.; Beykzadeh, A.A.; Chami, A. Fast synthesis of VC and V2C nanopowders by the mechanochemical combustion method. Int. J. Refract. Met. Hard Mater. 2015, 51, 1–5. [Google Scholar] [CrossRef]
- Wang, Z.; Rao, M.; Midya, R.; Joshi, S.; Jiang, H.; Lin, P.; Song, W.; Asapu, S.; Zhuo, Y.; Li, C.; et al. Threshold switching of Ag or Cu in dielectrics: Materials, mechanism, and applications. Adv. Funct. Mater. 2017, 28, 1704862. [Google Scholar] [CrossRef]
- Wang, K.; Hu, Q.; Gao, B.; Lin, Q.; Zhuge, F.-W.; Zhang, D.-Y.; Wang, L.; He, Y.-H.; Scheicher, R.H.; Tong, H.; et al. Threshold switching memristor-based stochastic neurons for probabilistic computing. Mater. Horiz. 2021, 8, 619–629. [Google Scholar] [CrossRef]
- Wang, Z.; Joshi, S.; Savel’ev, S.E.; Jiang, H.; Midya, R.; Lin, P.; Hu, M.; Ge, N.; Strachan, J.P.; Li, Z.; et al. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. Nat. Mater. 2017, 16, 101–108. [Google Scholar] [CrossRef] [Green Version]
- Li, Y.; Long, S.; Liu, Q.; Lv, H.; Liu, M. Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials. Small 2017, 13, 1604306. [Google Scholar] [CrossRef] [PubMed]
- Choi, S.; Yang, J.; Wang, G. Emerging memristive artificial synapses and neurons for energy-efficient neuromorphic computing. Adv. Mater. 2020, 32, e2004659. [Google Scholar] [CrossRef]
- Ma, J.; Tang, J. A review for dynamics of collective behaviors of network of neurons. Sci. China Technol. Sci. 2015, 58, 2038–2045. [Google Scholar] [CrossRef]
- Burkitt, A.N. A review of the integrate-and-fire neuron model: I. Homogeneous synaptic input. Biol. Cybern. 2006, 95, 1–19. [Google Scholar] [CrossRef]
- Gerstner, W.; Kistler, W.M.; Naud, R.; Paninski, L. Neuronal Dynamics: From Single Neurons to Networks and Models Of Cognition; Cambridge University Press: Cambridge, UK, 2014. [Google Scholar]
- Tsur, E.E. Neuromorphic Engineering: The Scientist’s, Algorithm Designer’s, and Computer Architect’s Perspectives on Brain-Inspired Computing; CRC Press: Boca Raton, FA, USA, 2021. [Google Scholar]
- Wang, Y.; Wang, G.; Shen, Y.; Iu, H.H.-C. A memristor neural network using synaptic plasticity and its associative memory. Circuits Syst. Signal Process. 2020, 39, 3496–3511. [Google Scholar] [CrossRef]
- Squire, L.; Berg, D.; Bloom, F.E.; Du Lac, S.; Ghosh, A.; Spitzer, N.C. Fundamental Neuroscience; Academic Press: Cambridge, MA, USA, 2012. [Google Scholar]
- Jiang, H.; Belkin, D.; Savel’ev, S.E.; Lin, S.; Wang, Z.; Li, Y.; Joshi, S.; Midya, R.; Li, C.; Rao, M.; et al. A novel true random number generator based on a stochastic diffusive memristor. Nat. Commun. 2017, 8, 882. [Google Scholar] [CrossRef] [PubMed] [Green Version]
- Woo, K.S.; Wang, Y.; Kim, Y.; Kim, J.; Kim, W.; Hwang, C.S. A combination of a volatile-memristor-based true random-number generator and a nonlinear-feedback shift register for high-speed encryption. Adv. Electron. Mater. 2020, 6, 1901117. [Google Scholar] [CrossRef]
- Kulczyk-Malecka, J.; Kelly, P.J.; West, G.; Clarke, G.C.B.; Ridealgh, J.A.; Almtoft, K.P.; Greer, A.L.; Barber, Z.H. Investigation of silver diffusion in TiO2/Ag/TiO2 coatings. Acta Mater. 2014, 66, 396–404. [Google Scholar] [CrossRef]
- Chang, C.F.; Chen, J.Y.; Huang, C.W.; Chiu, C.H.; Lin, T.Y.; Yeh, P.H.; Wu, W.W. Direct observation of dual-filament switching behaviors in Ta2 O5-based memristors. Small 2017, 13, 1603116. [Google Scholar] [CrossRef]
- Li, H.Y.; Huang, X.D.; Yuan, J.H.; Lu, Y.F.; Wan, T.Q.; Li, Y.; Xue, K.H.; He, Y.H.; Xu, M.; Tong, H.; et al. Controlled memory and threshold switching behaviors in a heterogeneous memristor for neuromorphic computing. Adv. Electron. Mater. 2020, 6, 2000309. [Google Scholar] [CrossRef]
- Lu, Y.-F.; Li, Y.; Li, H.; Wan, T.-Q.; Huang, X.; He, Y.-H.; Miao, X. Low-power artificial neurons based on Ag/TiN/HfAlOx/Pt threshold switching memristor for neuromorphic computing. IEEE Electron Device Lett. 2020, 41, 1245–1248. [Google Scholar] [CrossRef]
- Yang, J.-Q.; Wang, R.; Wang, Z.-P.; Ma, Q.-Y.; Mao, J.-Y.; Ren, Y.; Yang, X.; Zhou, Y.; Han, S.-T. Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks. Nano Energy 2020, 74, 104828. [Google Scholar] [CrossRef]
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Wang, Y.; Chen, X.; Shen, D.; Zhang, M.; Chen, X.; Chen, X.; Shao, W.; Gu, H.; Xu, J.; Hu, E.; et al. Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors. Nanomaterials 2021, 11, 2860. https://doi.org/10.3390/nano11112860
Wang Y, Chen X, Shen D, Zhang M, Chen X, Chen X, Shao W, Gu H, Xu J, Hu E, et al. Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors. Nanomaterials. 2021; 11(11):2860. https://doi.org/10.3390/nano11112860
Chicago/Turabian StyleWang, Yu, Xintong Chen, Daqi Shen, Miaocheng Zhang, Xi Chen, Xingyu Chen, Weijing Shao, Hong Gu, Jianguang Xu, Ertao Hu, and et al. 2021. "Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors" Nanomaterials 11, no. 11: 2860. https://doi.org/10.3390/nano11112860