Planar waveguides produced by implanting Si and C ions in rutile

Authors

  • Julián Mejía Morales Instituto de Física UNAM
  • Erick Flores-Romero Instituto de Física UNAM
  • Rebeca Trejo Luna
  • Jorge Rickards Instituto de Física UNAM

DOI:

https://doi.org/10.31349/RevMexFis.64.251

Keywords:

Optical Waveguides, Ion Implantation, Rutile, Important Optical properties of Crystals, Various Crystal Faces, Ions, Fluences, Two Dierent Ions-Damage, Reduce Fluence With Si Ions.

Abstract

Planar waveguides were generated in samples of rutile crystal (TiO2) by bombarding with two types
of ion: silicon and carbon. Rutile is used because of its anisotropic properties, particularly its birefrin-
gence. The guide is generated due to damage caused by the ions in the crystal which change its index of
refraction. Three parameters were used: the implantation ion energy, the implantation
uence, and the
orientation of the crystallographic planes. The refractive index prole of the irradiated sample was cal-
culated and together with the value of the optical barrier the comparison was made between the dierent
waveguides generated.

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Published

2018-04-30

How to Cite

[1]
J. Mejía Morales, E. Flores-Romero, R. Trejo Luna, and J. Rickards, “Planar waveguides produced by implanting Si and C ions in rutile”, Rev. Mex. Fís., vol. 64, no. 3 May-Jun, pp. 251–253, Apr. 2018.

Issue

Vol. 64 No. 3 May-Jun (2018): Revista Mexicana de Física

Section

05 Condensed Matter

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.