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Specificities of temperature dependence of saturation current of forward-biased shottkey diodes TiB x -n-6HSiC

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Abstract

It is researched temperature dependences of forward branch of Shottkey diodes TiB x -n-6HSiC. It is detected that forward branch of voltage-current characteristic is described by exponential dependence for voltage interval of 0.05-0.4 V and temperature interval of 100-500 K. At that saturation current and characteristic energy are weakly dependent on temperature. It is shown that redundant component of silicon carbide Shottkey diodes has tunnel behavior, in spite of spatial charge region width into researched diodes is essentially greater than characteristic tunnel length.

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Authors and Affiliations

  1. V. Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Kyiv, Ukraine

    Ya. Ya. Kudryk & S. K. Abdizhaliev

Authors
  1. Ya. Ya. Kudryk
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  2. S. K. Abdizhaliev
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Original Russian Text © Ya.Ya. Kudryk, S.K. Abdizhaliev, 2010, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2010, Vol. 53, No. 1, pp. 62–64.

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Kudryk, Y.Y., Abdizhaliev, S.K. Specificities of temperature dependence of saturation current of forward-biased shottkey diodes TiB x -n-6HSiC. Radioelectron.Commun.Syst. 53, 56–57 (2010). https://doi.org/10.3103/S0735272710010103

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  • DOI: https://doi.org/10.3103/S0735272710010103

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