Abstract
The possibility of using AlN/Al2O3 substrates to grow AlGaN/GaN hetero-epitaxial structures with a two-dimensional electron gas is studied. A method of calibrating the temperature of the substrates by measuring the thermal radiation spectrum is proposed. Differences between AlN/Al2O3 substrates that lead to differences in the electrophysical parameters of the grown structures are determined. AlN/Al2O3 substrates were used to grow AlGaN/GaN samples with a two-dimensional electron gas mobility in excess of 1300 cm2/(V · s) at an electron concentration in the channel higher than 1013 cm−2.
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Original Russian Text © T.V. Malin, V.G. Mansurov, A.M. Gilinskii, D.Yu. Protasov, A.S. Kozhukhov, A.P. Vasilenko, K.S. Zhuravlev, 2013, published in Avtometriya, 2013, Vol. 49, No. 5, pp. 13–17.
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Malin, T.V., Mansurov, V.G., Gilinskii, A.M. et al. Growth of AlGaN/GaN heterostructures with a two-dimensional electron gas on AlN/Al2O3 substrates. Optoelectron.Instrument.Proc. 49, 429–433 (2013). https://doi.org/10.3103/S8756699013050026
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DOI: https://doi.org/10.3103/S8756699013050026