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Vibrations of photocurrent induced by IR light in silicon with quantum dots

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Abstract

Experimental results related to the research of photocurrent vibrations induced by IR light in silicon with quantum dots are presented. It is shown that the large amplitude of the vibrations (up to 1 A) and the depth of the modulation (∼100%) observed in the experiment cannot be explained in the framework of the S.G. Kalashnikov Theory. To explain the observed photocurrent vibrations, the self-organized quantum dots, which possess anomalously large asymmetric capture cross sections for charge carriers, are used.

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References

  1. Bakhadyrkhanov, M.K., Askarov, Sh.I., Parmankulov, I.P., Normatov, A.U., Kutkova, O.G., and Mirbabaev, U.M., Current Instabilities in Silicon Doped with Manganese, Izv. AN UzSSR, Ser. fizicheskaya, 1986, no. 3, pp. 56–60.

  2. Bakhadyrkhanov, M.K., and Zikrillaev, N.F., Low-Frequency Current Vibrations with High Amplitude in Silicon Compensated with Manganese, Fiz. i Tekhn. Poluprov., 1984, vol. 18, no. 12, pp. 2220–2222.

    Google Scholar 

  3. Kalashnikov, S.G., Pustovoit, V.I., and Pado, G.S., The Theory of Thermoelectrical Instability in Photoconductive III-V Crystals, Fiz. i Tekhn. Poluprov., 1970, vol. 4, no. 7, pp. 1255–1261.

    Google Scholar 

  4. Bakhadyrkhanov, M.K., Zainobidinov, S., Komilov, T.S., and Teshaboev, A.T., Photoelectrical Properties of Silicon Doped with Manganese, Fiz. i Tekhn. Poluprov., 1975, vol. 9, no. 1, pp. 76–80.

    Google Scholar 

  5. Gerasimenko, N.N., Nanodimensional Structures in Implanted Semiconductors, Rossiiskii Khimich. Zhurn., 2002, vol. XLVI, no. 5, pp. 30–41.

    Google Scholar 

  6. Parkhomenko, Yu,N., Belogorokhov, A.I., Gerasimenko N.N., Irzhak, A.V., and Lisachenko, M.G., Properties of Self-Organized SiGe Nanostructures Formed by Ion Implantation, Semiconductors, 2004, vol. 38, no. 5, pp. 593–597.

    Article  Google Scholar 

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Authors and Affiliations

  1. Navoi Samarkand State University, University bul. 15, Samarkand, 140104, Republic of Uzbekistan

    E. U. Arzikulov & I. P. Parmankulov

Authors
  1. E. U. Arzikulov
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  2. I. P. Parmankulov
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Correspondence to E. U. Arzikulov.

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Original Russian Text © E.U. Arzikulov, I.P. Parmankulov, 2008, published in Elektronnaya Obrabotka Materialov, 2008, No. 6, pp. 93–96.

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Arzikulov, E.U., Parmankulov, I.P. Vibrations of photocurrent induced by IR light in silicon with quantum dots. Surf. Engin. Appl.Electrochem. 44, 504–507 (2008). https://doi.org/10.3103/S1068375508060148

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  • DOI: https://doi.org/10.3103/S1068375508060148

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