Abstract
Properties of thin PbZr0.52Ti0.48O3 (PZT) films on silicon substrates with Al2O3 and HfO2 dielectric barrier layers and LaNiO3 (LNO) conducting layers are studied. Barrier layers 2–10 nm thick are deposited on silicon wafers by via atomic-layer deposition (ALD). LNO layers are formed via chemical solution deposition. The critical HfO2 thickness required to prevent diffusion (upon which a perovskite phase forms in PZT films) is found to be 10 nm. The annealing temperature required for the formation of LNO crystalline structure is determined. It is shown that depositing an LNO conducting layer directly onto a silicon surface allows us to obtain PZT films with good crystallinity and electrophysical properties.
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Original Russian Text © D.S. Seregin, A.-M. Baziruvikha, N.M. Kotova, K.A. Vorotilov, L.A. Delimova, N.V. Zaitzeva, A.V. Myakon’kikh, K.V. Rudenko, V.F. Lukichev, 2018, published in Izvestiya Rossiiskoi Akademii Nauk, Seriya Fizicheskaya, 2018, Vol. 82, No. 3, pp. 390–394.
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Seregin, D.S., Baziruvikha, A.M., Kotova, N.M. et al. Formation of PZT Structures on Silicon. Bull. Russ. Acad. Sci. Phys. 82, 341–345 (2018). https://doi.org/10.3103/S1062873818030231
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DOI: https://doi.org/10.3103/S1062873818030231