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Depth-profile analysis of nanostructures by SIMS: Depth resolution function

  • Proceedings of the XVIII International Conference “Interaction of Ions with Surface”
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A new model of the depth-resolution function for secondary-ion mass spectrometry, which takes into account recoil implantation, ion mixing, and surface roughness formation under ion irradiation, is considered. A simple three-parameter equation is proposed to describe the depth-resolution function. Analytical expressions are obtained for two parameters.

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Authors and Affiliations

  1. Dep. Ingeneria Eléctrica CINVESTAV-IPN, Mexico D.F., Mexico

    Yu. Kudriavtsev, S. Gallardo, A. Villegas, G. Ramirez & R. Asomoza

Authors
  1. Yu. Kudriavtsev
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  2. S. Gallardo
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  3. A. Villegas
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  4. G. Ramirez
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  5. R. Asomoza
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Corresponding author

Correspondence to Yu. Kudriavtsev.

Additional information

Original Russian Text © Yu. Kudriavtsev, S. Gallardo, A. Villegas, G. Ramirez, R. Asomoza, 2008, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2008, Vol. 72, No. 7, pp. 947–950.

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Kudriavtsev, Y., Gallardo, S., Villegas, A. et al. Depth-profile analysis of nanostructures by SIMS: Depth resolution function. Bull. Russ. Acad. Sci. Phys. 72, 895–898 (2008). https://doi.org/10.3103/S1062873808070058

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  • DOI: https://doi.org/10.3103/S1062873808070058

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