Abstract
The circularly polarized electroluminescence of quantum-confined InGaAs/GaAs heterostructures with a ferromagnetic Ni(Co)/GaAs Schottky contact has been investigated. It is shown that the high degree of circular polarization (to 42%) is due to the injection of spin-polarized holes from the ferromagnetic metal. The dependence of the spin injection efficiency on the type of the metal/GaAs interface and the quantum well depth has been analyzed. The spin coherence length of holes was found to be ≈80 nm at 1.5 K.
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Original Russian Text © M.V. Dorokhin, S.V. Zaitsev, N.V. Baidus’, Yu.A. Danilov, P.B. Demina, B.N. Zvonkov, V.D. Kulakovskii, E.A. Uskova, 2008, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2008, Vol. 72, No. 2, pp. 180–183.
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Dorokhin, M.V., Zaitsev, S.V., Baidus’, N.V. et al. Investigation of the effects of spin injection of charge carriers from a ferromagnetic Ni(Co)/GaAs Schottky contact in quantum well heterostructures. Bull. Russ. Acad. Sci. Phys. 72, 163–166 (2008). https://doi.org/10.3103/S106287380802007X
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DOI: https://doi.org/10.3103/S106287380802007X