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Production and Characteristics of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells

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Abstract

(ZnSe)x(SnSe)1–x films have been produced using chemical molecular beam deposition (CMBD) from an ZnSe and SnSe compound with a stoichiometric composition at a substrate temperature of 500°С. The structural, morphological, and electrophysical properties of (ZnSe)0.1 (SnSe)0.9 films are studied. The size of film grains is 5–6 μm. The results of X-ray diffraction analysis of specimens have revealed that the films have a crystalline (orthorhombic) structure. The structural parameters of the produced films are presented. The electrical conductivity of the films measured using the Van der Pauw method varies within 15–0.6 Ω cm–1.

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Authors and Affiliations

  1. Physical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, Uzbekistan

    T. M. Razykov, B. A. Ergashev, R. T. Yuldoshov, A. A. Mavlonov & K. M. Kuchkarov

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  1. T. M. Razykov
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  2. B. A. Ergashev
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  3. R. T. Yuldoshov
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  4. A. A. Mavlonov
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  5. K. M. Kuchkarov
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Corresponding author

Correspondence to K. M. Kuchkarov.

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Original Russian Text © T.M. Razykov, B.A. Ergashev, R.T. Yuldoshov, A.A. Mavlonov, K.M. Kuchkarov, 2018, published in Geliotekhnika, 2018, No. 4, pp. 29–35.

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Razykov, T.M., Ergashev, B.A., Yuldoshov, R.T. et al. Production and Characteristics of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells. Appl. Sol. Energy 54, 255–260 (2018). https://doi.org/10.3103/S0003701X18040138

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  • DOI: https://doi.org/10.3103/S0003701X18040138

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