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Photoelectric structures based on nanoporous p-InP

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Abstract

The possibility of nanostructuring of surfaces of indium phosphide with hole conduction is confirmed. The technique of manufacturing and research of SnO2/InP heterostructures with a nanoporous surface at the interface is developed. It is shown that the investigated structure can form a basis for working out photovoltaic devices with an enlarged active surface.

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Authors and Affiliations

  1. Institute of Applied Physics, Academy of Sciences of Moldova, ul. Academiei 5, Chisinau, MD-2028, Republic of Moldova

    A. I. Dikusar, L. I. Bruk, D. A. Sherban, A. V. Simashkevich & I. M. Tiginyanu

  2. Moldova State University, ul. Mateevicha 60, Chisinau, MD-2009, Republic of Moldova

    L. I. Bruk

  3. Technical University of Moldova, ul. Shtefana chel Mare 168, Chisinau, MD-2004, Republic of Moldova

    E. V. Monaico & I. M. Tiginyanu

Authors
  1. A. I. Dikusar
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  2. L. I. Bruk
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  3. E. V. Monaico
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  4. D. A. Sherban
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  5. A. V. Simashkevich
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  6. I. M. Tiginyanu
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Corresponding author

Correspondence to A. I. Dikusar.

Additional information

Original Russian Text © A.I. Dikusar, L.I. Bruk, E.V. Monaico, D.A. Sherban, A.V. Simashkevich, I.M. Tiginyanu, 2008, published in Elektronnaya Obrabotka Materialov, 2008, No. 1, pp. 4–9.

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Dikusar, A.I., Bruk, L.I., Monaico, E.V. et al. Photoelectric structures based on nanoporous p-InP. Surf. Engin. Appl.Electrochem. 44, 1–5 (2008). https://doi.org/10.3103/S1068375508010018

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  • DOI: https://doi.org/10.3103/S1068375508010018

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