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Experimental cathodoluminescence studies of exciton transport in gallium nitride

  • Proceedings of the XVII Russian Symposium on Scanning Electron Microscopy and Analytical Methods of Investigation Applied for Solid States Physics
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The use of time-of-flight cathodoluminescence measurements in the studies of semiconductor samples partially covered with a light-absorbing mask of special geometry in order to obtain new quantitative information about the properties of materials is shown. The values of the exciton diffusion coefficient are determined from the results obtained in an experimental study of gallium nitride.

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Authors and Affiliations

  1. Tsiolkovsky Kaluga State University, ul. Stepana Razina 26, Kaluga, 248023, Russia

    A. N. Polyakov & M. A. Stepovich

  2. Otto von Guericke University, Universitatsplatz 2, 39106, Magdeburg, Germany

    M. Noltemeyer, T. Hempel & J. Christen

Authors
  1. A. N. Polyakov
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  2. M. Noltemeyer
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  3. T. Hempel
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  4. J. Christen
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  5. M. A. Stepovich
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Corresponding author

Correspondence to A. N. Polyakov.

Additional information

Original Russian Text © A.N. Polyakov, M. Noltemeyer, T. Hempel, J. Christen, M.A. Stepovich, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 9, pp. 1082–1085.

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Polyakov, A.N., Noltemeyer, M., Hempel, T. et al. Experimental cathodoluminescence studies of exciton transport in gallium nitride. Bull. Russ. Acad. Sci. Phys. 76, 970–973 (2012). https://doi.org/10.3103/S1062873812090183

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  • DOI: https://doi.org/10.3103/S1062873812090183

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