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Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling

  • Proceedings of the International Symposium “Nanophysics and Nanoelectronics-2011”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The elementary composition and electron concentration in series of delta doped heterostructures Al X Ga1 − X N/GaN with a two-dimensional electron channel are investigated. Separation of the electron channel and the doping Si admixture is shown by a combination of SIMS and C-V profiling.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, E. V. Demidov, Yu. N. Drozdov, O. I. Khrykin & V. I. Shashkin

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  1. M. N. Drozdov
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  2. N. V. Vostokov
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  3. V. M. Danil’tsev
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  4. E. V. Demidov
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  5. Yu. N. Drozdov
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  6. O. I. Khrykin
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  7. V. I. Shashkin
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Corresponding author

Correspondence to M. N. Drozdov.

Additional information

Original Russian Text © M.N. Drozdov, N.V. Vostokov, V.M. Danil’tsev, E.V. Demidov, Yu.N. Drozdov, O.I. Khrykin, V.I. Shashkin, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 2, pp. 250–254.

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Drozdov, M.N., Vostokov, N.V., Danil’tsev, V.M. et al. Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling. Bull. Russ. Acad. Sci. Phys. 76, 221–224 (2012). https://doi.org/10.3103/S106287381202013X

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  • DOI: https://doi.org/10.3103/S106287381202013X

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