Abstract
The results of numerical solutions of the complete equations of the diffusion-drift model (DDM) of Ge, Si and GaAs reverse-biased abrupt p-n junctions with injection of the constant-intensity electron flow into the p-region have been presented. The excitation mechanism of p-n junctions was examined and the factors affecting the frequency and amplitude of self-induced oscillations were established. The spectra of power and electron efficiency have been also presented. Abrupt Ge, Si and GaAs p-n junctions were shown to generate oscillations over the entire microwave range, while the second harmonic frequency could reach the terahertz (THz) range.
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Original Russian Text © K.A. Lukin, P.P. Maksymov, 2010, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2010, Vol. 53, No. 8, pp. 16–22.
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Lukin, K.A., Maksymov, P.P. Terahertz self-induced oscillations in the injection p-n junction with fixed reverse bias. Radioelectron.Commun.Syst. 53, 405–411 (2010). https://doi.org/10.3103/S0735272710080029
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DOI: https://doi.org/10.3103/S0735272710080029