Abstract
We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as μ ∝ L5.3, which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 Å. Next, we show that the in-plane carrier mobility in InAs/GaSb superlattices is inversely proportional to carrier density in n- and p-type samples, the result of screened interface roughness scattering.
[1] A. Rogalski and P. Martyniuk, “InAs/GaInSb superlattices as a promising material system for third generation infrared detectors”, Infrared Phys. Techn. 48, 39–52 (2006); A. Rogalski, “Material considerations for third generation infrared photon detectors”, Infrared Phys. Techn. 50, 240–252 (2007). http://dx.doi.org/10.1016/j.infrared.2005.01.003Search in Google Scholar
[2] Q.K. Yang, F. Fuchs, J. Schmitz, and W. Pletschen, “Investi. gation of trap.assisted tunnelling current in InAs/(GaIn)Sb superlattice long.wavelength photodiodes”, Appl. Phys. Lett. 81, 4757–4759 (2002). http://dx.doi.org/10.1063/1.152930610.1063/1.1529306Search in Google Scholar
[3] R. Rehm, M. Walther, F. Fuchs, J. Schmitz, and J.H. Fleissner, “Passivation of InAs/(GaIn)Sb short.period superlattice photodiodes with 10 μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1-y”, Appl. Phys. Lett. 86, 173501 (2005). http://dx.doi.org/10.1063/1.190632610.1063/1.1906326Search in Google Scholar
[4] A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, and M.Z. Tidrow, “Ammonium sulfide passivation of type.II InAs/GaSb superlattice photodiodes”, Appl. Phys. Lett. 84, 2037–2039 (2004). http://dx.doi.org/10.1063/1.168689410.1063/1.1686894Search in Google Scholar
[5] F. Szmulowicz, S. Elhamri, H.J. Haugan, G.J. Brown, and W.C. Mitchel, “Demonstration of interface-scattering-limited electron mobilities in InAs/GaSb superlattices”, J. Appl. Phys. 101, 043706 (2007). http://dx.doi.org/10.1063/1.243494410.1063/1.2434944Search in Google Scholar
[6] F. Aristone, P. Gassot, J.F. Palmier, D.K. Maude, B. Goutiers, J.L. Gauffier, J.C. Portal, and F. Mollot, “Probing the interface fluctuations in semiconductor superlattices using a magneto.transport technique”, Superlattice. Microst. 15, 225–228 (1994). http://dx.doi.org/10.1006/spmi.1994.104510.1006/spmi.1994.1045Search in Google Scholar
[7] I. Dharssi and P.N. Butcher, “Interface roughness scattering in a superlattice”, J. Phys. Condens. Phys. 2, 4629–4635 (1990). http://dx.doi.org/10.1088/0953-8984/2/20/00910.1088/0953-8984/2/20/009Search in Google Scholar
[8] G. Etamadi and J.F. Palmier, “Effect of interface roughness on non.linear vertical transport in GaAs/AlAs superlattices”, Solid State Commun. 86, 739–743 (1993). http://dx.doi.org/10.1016/0038-1098(93)90182-M10.1016/0038-1098(93)90182-MSearch in Google Scholar
[9] H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue, “Interface roughness scattering in GaAs/AlAs quantum wells”, Appl. Phys. Lett. 51, 1934–1936 (1987). http://dx.doi.org/10.1063/1.9830510.1063/1.98305Search in Google Scholar
[10] R. Gottinger, A. Gold, G. Abstreiter, G. Weimann, and W. Schlapp, “Interface roughness scattering and electron mobilities in thin GaAs quantum wells”, Europhys. Lett. 6, 183–188 (1988). http://dx.doi.org/10.1209/0295-5075/6/2/01510.1209/0295-5075/6/2/015Search in Google Scholar
[11] J.R. Meyer, D.J. Arnold, C.A. Hoffman, F.H. Bartoli, and L.R. Ram.Mohan, “Electron and hole in-plane mobilities in HgTe-CdTe superlattices”, Phys. Rev. B46, 4139–4146 (1992). 10.1103/PhysRevB.46.4139Search in Google Scholar PubMed
[12] C.A. Hoffman, J.R. Meyer, E.R. Youngdale, F.J. Bartoli, and H.R. Miles, “Interface roughness scattering in semiconducting and semimetallic InAs-Ga1−xInxSb superlattices”, Appl. Phys. Lett. 63, 2210 (1993). http://dx.doi.org/10.1063/1.11080010.1063/1.110800Search in Google Scholar
[13] H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue, “Interface roughness scattering in GaAs/AlAs quantum wells”, Appl. Phys. Lett. 41, 1934–1936 (1987). http://dx.doi.org/10.1063/1.9830510.1063/1.98305Search in Google Scholar
[14] A. Gold, “Electronic transport properties of a two-dimensional electron gas in a silicon quantum.well structure at low temperature”, Phys. Rev. B35, 723–733 (1987). 10.1103/PhysRevB.35.723Search in Google Scholar PubMed
[15] R.M. Feenstra, D.A. Collins, D.Z.T. Ting, M.W. Wang, and T.C. McGill, “Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunnelling microscopy”, Phys. Rev. Lett. 72, 2749–2752 (1994). http://dx.doi.org/10.1103/PhysRevLett.72.274910.1103/PhysRevLett.72.2749Search in Google Scholar PubMed
[16] F. Szmulowicz, S. Elhamri, H.J. Haugan, G.J. Brown, and W.C. Mitchel, “Carrier mobility as a function of carrier density in type.II InAs/GaSb superlattices”, J. Appl. Phys. 105, 074303 (2009). http://dx.doi.org/10.1063/1.310328110.1063/1.3103281Search in Google Scholar
[17] H.J. Haugan, F. Szmulowicz, K. Mahalingam, G.J. Brown, S.R. Munshi, and B. Ullrich, “Short.period InAs/GaSb type-II superlattices for mid.infrared detectors”, Appl. Phys. Lett. 87, 261106 (2005). http://dx.doi.org/10.1063/1.215026910.1063/1.2150269Search in Google Scholar
© 2010 SEP, Warsaw
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
