Contamination control study in grown oxide for reliable CMOS operations
Abstract
Contamination control in the grown oxide affects the device performance and considered as the main parameter in the fabrication process. The presence of mobile ions in the oxide shifts the flat-band voltage of the device and the key parameters responsible for this behavior are the repeatability of the process parameters and overall fabrication environment. Further cleanliness of the fabrication tool, stability of process parameters and deposition conditions can also contaminate the oxide quality. In present article various parameters such as thickness, cleanliness, and process environment are studied and analyzed.
How to cite this article:
Singh K, Venkatesh V. Contamination Control Study in Grown Oxide for Reliable CMOS Operations. J Adv Res Electro Engi Tech 2020; 7(3&4): 6-9.
DOI: https://doi.org/10.24321/2456.1428.202003
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