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Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Special Issue on Frontier Research on Bonding and Interconnect Materials for Electric Components and Related Microprocessing -Part III-
Low-Temperature Bonding of Copper by Copper Electrodeposition
Shinji FukumotoKoki NakamuraMakoto TakahashiYuto TanakaShoya TakahashiMichiya Matsushima
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2022 Volume 63 Issue 6 Pages 783-788

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Abstract

Bonding copper in the solid state requires either a high temperature, large deformation, or high vacuum. In the present study, copper was butt-bonded using a K-shaped groove at 298 K under no bonding pressure through copper electrodeposition. The initial gap between the faying surfaces of the copper rods were gradually filled with the electrodeposition of copper from the center to the periphery. No significant defects were observed in the bond layer, and a high joint strength of approximately 240 MPa was obtained. There were three regions in the bond layer: fine columnar grain region, ultrafine grain region, and recrystallized grain region. The size of the ultrafine grains was several tens of nanometers, and the microhardness was larger than that of the base metal. As electrodeposition progressed, there were insufficient additives for electrodeposition near the center of the bond layer, and recrystallization occurred owing to self-annealing.

Fig. 4 Inverse Pole Figure (IPF) maps of the bond layer under a current density of 20 mA/cm2 for a bond time of 18.0 ks. (a) Optical microscopy at the edge of the bond layer, (b) displays the highlighted area b in (a), and (c) displays the highlighted area of c in (a). Fullsize Image
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