A reactant gas mixture composed of TiCl₄, H₂ and N₂ was introduced to the tubular reactor and TiN was deposited on the inner wall of the reactor under different conditions (temperature, total gas flow rate, P_TiCl4, P_H2/P_N2 ratio). The growth rates of the films formed were obtained by measuring the thickness of the films.
At 1273 K and P_N2/P_H2=1, the growth rate of the film decreased as P_TiCl4 increased in the range 1.52 kPa≤P_TiCl4≤4.05 kPa.
At 1273 K and P_TiCl4=2.43 kPa, the growth rate of the film had a maximum in the case of P_N2/P_H2=1.
The rate equations were obtained at 1273 K in the range 1.52 kPa≤P_TiCl4≤4.05 kPa as follows:
R∝P^−0.1_TiCl4·P_H2^0.5·P_N2(P_N2/P_H2≤1),
R∝P^−0.1_TiCl4·P_H2·P_N2^0.5(P_N2/P_H2≥1)
The apparent activation energy of the growth rate of the film at P_N2/P_H2=1, P_TiCl4=2.43 kPa was determined to be 230 kJ/mol (1173∼1273 K).