MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Effects of Dislocations on the Oxygen Ionic Conduction in Yttria Stabilized Zirconia
Kazuya OtsukaKatsuyuki MatsunagaAtsutomo NakamuraSeiichiro IiAkihide KuwabaraTakahisa YamamotoYuichi Ikuhara
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2004 Volume 45 Issue 7 Pages 2042-2047

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Abstract

Ionic conductivities of yttria-stabilized zirconia (YSZ) single crystals deformed at high-temperature were measured by the AC impedance method. A correlation between ionic conductivity and dislocation structures of deformed YSZ single crystals were investigated. Electrical conductivity measurements of the deformed YSZ crystals were performed for two different current directions of [110] and [111]. The [110] direction is parallel to edge dislocations introduced by the primary slip system, while the [111] direction is normal to the edge dislocation lines. Transmission electron microscopy observations showed that the dislocations due to the primary slip system of (001)[110] were mainly generated at the strain of around 1% strain, while the secondary slip systems, such as (111)[101] and (111)[011], were also activated at about 10% strain. It was found that the deformed samples with larger strains exhibited higher electrical conductivities irrespective of the measured current directions. However, the electrical conductivity along [111] was higher than that along [110], suggesting that mobility of oxygen ion is sensitive to the dislocation structures. From the activation energy for oxygen diffusion in the deformed samples, it was found that the oxygen migration enthalpy for deformed samples became smaller than that for undeformed samples, whereas the association enthalpy for the deformed samples became larger. The increase in the association enthalpy might be due to interaction between oxygen vacancies and dislocations. It is thus considered that oxygen vacancies concentrate around dislocations, and are able to move very quickly along the dislocation lines.

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© 2004 The Japan Institute of Metals and Materials
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