A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer

@article{ART002944337},
author={ 소철 and 홍성철 },
title={A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer},
journal={IDEC Journal of Integrated Circuits and Systems},
issn={-},
year={2023},
volume={9},
number={2},
pages={27-31},
doi={10.23075/jicas.2023.9.2.005},
url={http://dx.doi.org/10.23075/jicas.2023.9.2.005}

TY - JOUR
AU - 소철
AU - 홍성철
TI - A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer
T2 - IDEC Journal of Integrated Circuits and Systems
PY - 2023
VL - 9
IS - 2
PB - 한국과학기술원 반도체설계교육센터
SP - 27-31
SN - -
AB - In this paper, a wideband gm-boosted up-conversion mixer is presented, which is fabricated in 28-nm bulk CMOS process. It adopts a double-balanced structure for high isolation characteristics. The circuit employs a current bleeding path through PMOS to enhance the gm, resulting in a high conversion gain. The feedback resistor R enables impedance matching without an additional impedance matching network while providing wideband characteristics in the baseband. Furthermore, the symmetrical layout of the switching stage cells improves the LO to RF isolation performance. The measured peak conversion gain is 3.2 dB, and the 3-dB frequency bandwidth is more than 6 GHz. The power consumption is 6.38 mW at 1.1 V supply voltage. The chip size, including the pads, is 0.53 x 0.42 mm2 and the core area is 0.2 x 0.26 mm2.
KW - Current-bleeding, Feedback resistor, Gm-boosting, PMOS, Up-conversion mixer
DO - 10.23075/jicas.2023.9.2.005
UR - http://dx.doi.org/10.23075/jicas.2023.9.2.005
ER -

소철 and 홍성철 (2023). A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer. IDEC Journal of Integrated Circuits and Systems, 9( 2), 27- 31.

소철 and 홍성철 . 2023, “A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer”, IDEC Journal of Integrated Circuits and Systems, vol. 9, no. 2, pp. 27-31. Available from: doi:10.23075/jicas.2023.9.2.005

소철 홍성철 et al. “A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer” IDEC Journal of Integrated Circuits and Systems 9.2 pp. 27-31 (2023): 27.

소철 , 홍성철 . A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer IDEC Journal of Integrated Circuits and Systems [Internet]. 2023; 9( 2), : 27-31. Available from: doi:10.23075/jicas.2023.9.2.005

소철 and 홍성철 . “A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer” IDEC Journal of Integrated Circuits and Systems 9, no.2 (2023): 27-31. doi: 10.23075/jicas.2023.9.2.005

홈 권호 목록 논문 목록 논문 상세

A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer

IDEC Journal of Integrated Circuits and Systems

약어 : JICAS

2023, vol.9, no.2, pp.27 - 31

DOI : 10.23075/jicas.2023.9.2.005

발행기관 : 한국과학기술원 반도체설계교육센터

연구분야 : 전기공학

소철¹ , 홍성철²

¹한국과학기술원

²한국과학기술원

인용한 논문 수 : - 서지 간략 보기

초록

In this paper, a wideband gm-boosted up-conversion mixer is presented, which is fabricated in 28-nm bulk CMOS process. It adopts a double-balanced structure for high isolation characteristics. The circuit employs a current bleeding path through PMOS to enhance the gm, resulting in a high conversion gain. The feedback resistor R enables impedance matching without an additional impedance matching network while providing wideband characteristics in the baseband. Furthermore, the symmetrical layout of the switching stage cells improves the LO to RF isolation performance. The measured peak conversion gain is 3.2 dB, and the 3-dB frequency bandwidth is more than 6 GHz. The power consumption is 6.38 mW at 1.1 V supply voltage. The chip size, including the pads, is 0.53 x 0.42 mm2 and the core area is 0.2 x 0.26 mm2.