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Title: Properties of melt-grown ZnSe solid-state radiation detectors

Abstract

Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10 x 10 x 2 mm{sup 3}. Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25 C. Pulse height spectra were obtained using {sup 241}Am and {sup 109}Cd at both 25 C and 150 C with applied bias of 9,000 V/cm. Current versus temperature was measured over the temperature range of 30 C to 150 C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of {minus}70 C to 170 C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product ({mu}{tau}) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied.

Authors:
 [1];  [2]
  1. II-VI Inc., Saxonburg, PA (United States)
  2. Brookhaven National Lab., Upton, NY (United States). Dept. of Physics
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10104816
Report Number(s):
BNL-61058; CONF-941061-10
ON: DE95003964; CRN: C/BNL--94-12; TRN: AHC29503%%110
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Technical Report
Resource Relation:
Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference,Norfolk, VA (United States),30 Oct - 5 Nov 1994; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GAMMA DETECTION; SEMICONDUCTOR DETECTORS; X-RAY DETECTION; PERFORMANCE; ELECTRICAL PROPERTIES; AMERICIUM 241; CADMIUM 109; TEMPERATURE RANGE 0273-0400 K; EXPERIMENTAL DATA; 440101; GENERAL DETECTORS OR MONITORS AND RADIOMETRIC INSTRUMENTS

Citation Formats

Eissler, E E, and Lynn, K G. Properties of melt-grown ZnSe solid-state radiation detectors. United States: N. p., 1994. Web. doi:10.2172/10104816.
Eissler, E E, & Lynn, K G. Properties of melt-grown ZnSe solid-state radiation detectors. United States. https://doi.org/10.2172/10104816
Eissler, E E, and Lynn, K G. 1994. "Properties of melt-grown ZnSe solid-state radiation detectors". United States. https://doi.org/10.2172/10104816. https://www.osti.gov/servlets/purl/10104816.
@article{osti_10104816,
title = {Properties of melt-grown ZnSe solid-state radiation detectors},
author = {Eissler, E E and Lynn, K G},
abstractNote = {Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10 x 10 x 2 mm{sup 3}. Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25 C. Pulse height spectra were obtained using {sup 241}Am and {sup 109}Cd at both 25 C and 150 C with applied bias of 9,000 V/cm. Current versus temperature was measured over the temperature range of 30 C to 150 C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of {minus}70 C to 170 C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product ({mu}{tau}) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied.},
doi = {10.2172/10104816},
url = {https://www.osti.gov/biblio/10104816}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Dec 01 00:00:00 EST 1994},
month = {Thu Dec 01 00:00:00 EST 1994}
}