Numerical Analysis of Deposition Rates of Zirconium Thin Films by Thermal Chemical Vapor Deposition

Shizuo NAKAMURA; Yoshishige HAYASHI; Takuya KAWANISHI; Toshiteru KOMATSU; Masashi TAKEUCHI

doi:10.2109/jcersj.100.266

Shizuo NAKAMURA, Yoshishige HAYASHI, Takuya KAWANISHI, Toshiteru KOMATSU, Masashi TAKEUCHI

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Keywords: Chemical vapor deposition, Zirconium, Numerical analysis, Ultrafine particle, Zirconium tetra-i-propoxide

JOURNAL FREE ACCESS

1992 Volume 100 Issue 1159 Pages 266-271

DOI https://doi.org/10.2109/jcersj.100.266

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Abstract

Zirconia films were prepared by the CVD method using thermal decomposition of zirconium-tetra-i-propoxide with He gas under 20kPa. The films on the substrate consisted of fine particles less than 1μm and were metastable tetragonal-zirconia. The maximum deposition rate was 6nm/s at 673K and a reactant gas concentration of 0.05mol%. The profile of deposition rate was calculated using a simplified reaction and coagulation model. The calculated results showed a good agreement with the experimental data under the operating conditions of 673K and 0.07mol%. Deposition rates for the system used are estimated with this model.

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