01aB05 Epitaxial growth of GaN films on Tungsten substrates(NCCG-36)

G. Li; J. Ohta; S. Inoue; K. Okamoto; T. Nakano; H. Fujioka

doi:10.19009/jjacg.33.4_201

Journal of the Japanese Association for Crystal Growth

Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275

01aB05 Epitaxial growth of GaN films on Tungsten substrates(NCCG-36)

G. Li, J. Ohta, S. Inoue, K. Okamoto, T. Nakano, H. Fujioka

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JOURNAL FREE ACCESS

2006 Volume 33 Issue 4 Pages 201-

DOI https://doi.org/10.19009/jjacg.33.4_201

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Abstract

We have grown GaN films epitaxially on W(110) substrates by using low-temperature AlN films as buffer layer by pulsed laser deposition (PLD). The as-grown GaN films contain no 30°rotational domains and have quite flat surfaces.

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