1998 年 25 巻 3 号 p. A27-
The hydrogen chemisorption on the GaAs (111)A Ga surface is investigated under atmospheric pressure using the in situ monitoring system, which consists of GaAs halogen transport atomic layer epitaxy (ALE) and the surface photoabsorption (SPA) systems. Furthermore, in order to determine the atomic configuration on the surface, ab initio molecular dynamics calculation is performed.