Title |
Performances of Silicon-Based Field-Emission Cathodes Coated with UltraNano Crystalline Diamond |
Authors |
- O. Mohsen, V. Korampally, A. Lueangaramwong, P. Piot, V. Valluri
Northern Illinois University, DeKalb, Illinois, USA
- R. Divan, A.V. Sumant
Argonne National Laboratory, Argonne, Illinois, USA
- P. Piot
Fermilab, Batavia, Illinois, USA
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Abstract |
Field-emission electron sources have been considered as possible candidates for the production of bright or high-current electron bunches. In this paper, we report on the experimental characterization of silicon-based field-emitter arrays (FEA) in a DC high voltage gap. The silicon cathodes are produced via a simple self-assembling process. The measurement reported in this paper especially compares the field-emission properties of a nanostructured and planar diamond-coated Si-based cathode.
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Funding |
Work supported by NSF grant PHY-1535401 and DOE award DE-SC0018367 with NIU |
Paper |
download TUPTS084.PDF [13.354 MB / 4 pages] |
Export |
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Conference |
IPAC2019 |
Series |
International Particle Accelerator Conference (10th) |
Location |
Melbourne, Australia |
Date |
19-24 May 2019 |
Publisher |
JACoW Publishing, Geneva, Switzerland |
Editorial Board |
Mark Boland (UoM, Saskatoon, SK, Canada); Hitoshi Tanaka (KEK, Tsukuba, Japan); David Button (ANSTO, Kirrawee, NSW, Australia); Rohan Dowd (ANSTO, Kirrawee, NSW, Australia); Volker RW Schaa (GSI, Darmstadt, Germany); Eugene Tan (ANSTO, Kirrawee, NSW, Australia) |
Online ISBN |
978-3-95450-208-0 |
Received |
17 May 2019 |
Accepted |
23 May 2019 |
Issue Date |
21 June 2019 |
DOI |
doi:10.18429/JACoW-IPAC2019-TUPTS084 |
Pages |
2117-2120 |
Copyright |
Published by JACoW Publishing under the terms of the Creative Commons Attribution 3.0 International license. Any further distribution of this work must maintain attribution to the author(s), the published article's title, publisher, and DOI. |
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