Abstract
A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC’s 0.18 μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help by pass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR’s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 μm2 layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
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Project supported by the Applied Materials, Inc. of China
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Cui, Q., Han, Y., Dong, Sr. et al. A robust polysilicon-assisted SCR in ESD protection application. J. Zhejiang Univ. - Sci. A 8, 1879–1883 (2007). https://doi.org/10.1631/jzus.2007.A1879
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DOI: https://doi.org/10.1631/jzus.2007.A1879
Key words
- Electro-static discharge (ESD)
- Silicon-controlled rectifier (SCR)
- Robustness performance
- Polysilicon-assisted
- Human body model (HBM)