IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Online ISSN : 1745-1337
Print ISSN : 0916-8508
Special Section on Analog Circuit Techniques and Related Topics
150GHz Fundamental Oscillator Utilizing Transmission-Line-Based Inter-Stage Matching in 130nm SiGe BiCMOS Technology
Sota KANOTetsuya IIZUKA
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2024 Volume E107.A Issue 5 Pages 741-745

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Abstract

A 150GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers fT and fMAX of 350GHz and 450GHz. According to simulation results, an output power of 3.17dBm is achieved at 147.6GHz with phase noise of -115dBc/Hz at 10MHz offset and figure-of-merit (FoM) of -180dBc/Hz.

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© 2024 The Institute of Electronics, Information and Communication Engineers
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