IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate
Hiroyuki OGATAKenji ICHIJOKenji KONDOAkito HARA
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2013 Volume E96.C Issue 2 Pages 285-288

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Abstract

A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is a recently popular topic in the field of Si devices. In this study, self-aligned planar metal double-gate poly-Si TFTs consisting of an embedded bottom metal gate, a top metal gate fabricated by a self-alignment process, and a lateral poly-Si film with a grain size greater than 2µm were fabricated on a glass substrate at 550°C. The nominal field-effect mobility of an n-channel TFT is 530cm2/Vs, and its subthreshold slope is 140mV/dec. The performance of the proposed TFTs is superior to that of top-gate TFTs fabricated using equivalent processes.

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© 2013 The Institute of Electronics, Information and Communication Engineers
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