Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk

Kaito TOMARI; Jun YONEDA; Tetsuo KODERA

doi:10.1587/transele.2022FUS0001

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk

Kaito TOMARI, Jun YONEDA, Tetsuo KODERA

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Keywords: semiconductor qubits, crosstalk, quantum computers, device designs

JOURNAL FREE ACCESS

2023 Volume E106.C Issue 10 Pages 588-591

DOI https://doi.org/10.1587/transele.2022FUS0001

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Abstract

Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip-chip bonding.

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