This study presents a new structure of vertical-type CMOS Hall devices to detect 3-D magnetic field in various types of applications or devices with high sensitivity. For enhancement of sensitivity, a 4-contact structure instead of a conventional 3-contact or 5-contact one is adopted. A prototype of the proposed VHD is fabricated in 0.18 um CMOS process, and the sensitivity increases by 13 times which corresponds to improvement in SNR by 22.3 dB without any additional power or area. The VHD with 4 contacts can be useful in automotive applications where detection of 3-D magnetic field with high resolution is necessary.